Surface charge dynamics on air-exposed ferroelectric Pb (Zr, Ti) O 3 (001) thin films
Probing of the free surface ferroelectric properties of thin polar films can be achieved either
by estimating the band bending variance under the top-most layer or by studying the extent …
by estimating the band bending variance under the top-most layer or by studying the extent …
Design of a solar light-responsive metal oxide/CdS/SrTiO3 catalyst with enhanced charge separation for hydrogen evolution
A cadmium sulfide/strontium titanate (CdS/SrTiO 3) composite with excellent charge
separation efficiency was successfully developed by a simple precipitation process. The …
separation efficiency was successfully developed by a simple precipitation process. The …
Low-energy electron diffraction from ferroelectric surfaces: Dead layers and surface dipoles in clean
The positions of the low energy electron diffraction (LEED) spots from ferroelectric single
crystal films depend on its polarization state, due to electric fields generated outside of the …
crystal films depend on its polarization state, due to electric fields generated outside of the …
Triggering surface ferroelectric order in Pb (Zr, Ti) O3 (001) by deposition of platinum
By platinum deposition on a 150 nm thick film of lead zirco-titanate oriented PZT (001),
grown on strontium titanate (001) single crystals with a strontium ruthenate buffer layer …
grown on strontium titanate (001) single crystals with a strontium ruthenate buffer layer …
Characterization of the Al/Ge/In2Se3/Ga2S3/Al hybrid tunneling barriers designed for Gigahertz/Terahertz applications
AF Qasrawi, OA Omareya - Thin Solid Films, 2018 - Elsevier
In the current work, we report the design and performance of a tunneling amorphous thin film
hybrid device made of Ge/In 2 Se 3/Ga 2 S 3 sandwiched between two aluminum thin films …
hybrid device made of Ge/In 2 Se 3/Ga 2 S 3 sandwiched between two aluminum thin films …
Synthesis, characterization and application of WS₂ nanowire-nanoflake hybrid nanostructures
GA Asres - 2018 - oulurepo.oulu.fi
Tiivistelmä Siirtymämetallidikalkogenidistä (transition metal dichalcogenide, TMD) olevat
materiaalit kiteytyvät kerroksittaisiksi rakenteiksi, joiden stoikiometria on MX₂, missä M on …
materiaalit kiteytyvät kerroksittaisiksi rakenteiksi, joiden stoikiometria on MX₂, missä M on …
Band bending at magnetic Ni/Ge (001) interface investigated by X-ray photoelectron spectroscopy
We report the molecular beam epitaxy growth of Ni on a clean Ge (001) surface with an
intermediate NiGe layer forming at the interface at room temperature. The crystallinity of the …
intermediate NiGe layer forming at the interface at room temperature. The crystallinity of the …