Replacement metal gate processes for vertical transport field-effect transistor
2018-01-05 Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
Self-aligned contact for vertical field effect transistor
BA Anderson, S Bentley, SC Fan… - US Patent …, 2020 - Google Patents
Embodiments of the invention are directed to a method and resulting structures for a
semiconductor device having self aligned contacts. In a non-limiting embodiment of the …
semiconductor device having self aligned contacts. In a non-limiting embodiment of the …
Method and structure for forming a vertical field-effect transistor using a replacement metal gate process
(57) ABSTRACT A method for manufacturing a vertical transistor device includes forming a
first plurality of fins in a first device region on a substrate, and forming a second plurality of …
first plurality of fins in a first device region on a substrate, and forming a second plurality of …
Vertical fin field effect transistor devices with reduced top source/drain variability and lower resistance
K Cheng, S Mochizuki, CH Lee, J Li - US Patent 10,916,638, 2021 - Google Patents
(57) ABSTRACT A method of forming a fin field effect device is provided. The method
includes forming one or more vertical fins on a substrate and a fin template on each of the …
includes forming one or more vertical fins on a substrate and a fin template on each of the …
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
(57) ABSTRACT A semiconductor structure includes a substrate, a bottom source/drain
region disposed on a top surface of the sub strate, and a plurality of fins disposed over a top …
region disposed on a top surface of the sub strate, and a plurality of fins disposed over a top …
Replacement metal gate processes for vertical transport field-effect transistor
2019-05-15 Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
Semiconductor device having vertical channel and method of manufacturing the same
SI Park, JG You, DH Lee, YI Lee - US Patent 10,727,354, 2020 - Google Patents
(57) ABSTRACT A semiconductor device includes a substrate; a vertical channel structure
including a pair of active fins extended in a first direction, perpendicular to an upper surface …
including a pair of active fins extended in a first direction, perpendicular to an upper surface …
Vertical field-effect transistor (VFET) devices and methods of forming the same
Vertical field-effect transistor (VFET) devices and methods of forming VFET devices are
provided. The methods may include forming a channel region that protrudes from an upper …
provided. The methods may include forming a channel region that protrudes from an upper …
Vertical fin field effect transistor with integral U-shaped electrical gate connection
(57) ABSTRACT A method of forming a complementary metal-oxide-semi conductor (CMOS)
device is provided. The method includes forming a bottom spacer layer on a substrate …
device is provided. The method includes forming a bottom spacer layer on a substrate …
Reduced resistance source and drain extensions in vertical field effect transistors
P Xu, CW Yeung, C Zhang - US Patent 10,269,957, 2019 - Google Patents
Semiconductor devices and methods of forming the same include forming a bottom
source/drain region in a semicon ductor substrate under a semiconductor fin. First charged …
source/drain region in a semicon ductor substrate under a semiconductor fin. First charged …