Tensile-Strained GeSn Microbridge Lasers with Lithographically Controllable Emission Wavelengths

M Chen, HJ Joo, Y Kim, EH Toh, E Quek, Z Ikonic… - ACS …, 2024 - ACS Publications
GeSn alloys are considered a promising solution to long-sought on-chip industry-compatible
light sources. Relentless efforts to improve the performance of GeSn lasers include utilizing …

Electrically pumped GeSn micro-ring lasers

T Liu, L Seidel, O Concepción… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
Recent progress in the quest for CMOS-integrable GeSn light sources comprises the
optically-pumped laser operating at room temperature and the first demonstrations of …

Mid-infrared group-IV nanowire laser

Y Kim, S Assali, J Ge, S Koelling, M Luo, L Luo… - arXiv preprint arXiv …, 2024 - arxiv.org
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for
integrated photonics platforms. Despite the impressive progress in developing nanowire …

Strained Germanium LED with SiN Stressor and Microbridge based on Edge Stress Concentration

B Shu, Z Yu, X Sun, B Zhu, H Hu, L Wang, T Miao… - Semiconductors, 2024 - Springer
Tensile strain is a widely discussed mean which induces a direct bandgap in Ge for the
realization of semiconductor optoelectronic devices compatible with Si microelectronics. In …