Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its
nanostructures, holds promise for the development of photonic devices. The recent …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

The band lineup, or alignment, of semiconductors is investigated via first-principles
calculations based on density functional theory (DFT) and many-body perturbation theory …

III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

Electroluminescent (EL) devices (see Figure) have been fabricated using n‐ZnO nanorod
arrays grown on p‐GaN epilayers. Simple heteroepitaxial growth yields vertically aligned …

Light emission from semiconductors depends not only on the efficiency of carrier injection
and recombination but also extraction efficiency. For ultraviolet emission from high band gap …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

In this study, we investigated the effect of cobalt doping on band alignment and the
performance of nanostructured ZnO/CuO heterojunction solar cells. ZnO nanorods and CuO …

The energy band alignment at interfaces of semiconducting oxides is of direct relevance for
the electrical function of electronic devices made with such materials. The most important …

We in situ probed the surface band bending (SBB) by ultraviolet photoelectron spectroscopy
(UPS) in conjunction with field-effect transistor measurements on the incompletely depleted …