Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and …
C Wang, Y Xu, Y Liu - Advanced Functional Materials, 2024 - Wiley Online Library
The manipulation of magnetization through optically generated ultrafast spin currents is a fascinating area that needs a thorough understanding for its potential future applications. In …
K Kudo, M Yamada, S Honda, Y Wagatsuma… - Applied Physics …, 2021 - pubs.aip.org
We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in semiconductor-based lateral spin-valve devices. From first-principles calculations, we …
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as a means to detect spin currents or manipulate the magnetization of …
We have investigated the electron spin diffusion length at room temperature in bulk n-doped germanium as a function of the doping concentration. To this purpose, we exploit a nonlocal …
We show that the photon energy dependence of the photo-induced inverse spin-Hall effect (ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly …
We report on photoinduced inverse spin-Hall effect (ISHE) measurements as a function of the incident photon energy in the 4–50 K temperature range for a Pt/n-doped Si junction …
Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising candidate for the integration of spintronics, photonics, and electronics. Here, we investigate …
Realization of the Inverse Spin Hall Effect (ISHE) with hot electrons in direct bandgap semiconductors is an intriguing puzzle. Here, we report the influence of steady state carrier …