Emergence of spin–charge conversion functionalities due to spatial and time-reversal asymmetries and chiral symmetry

K Kondou, Y Otani - Frontiers in Physics, 2023 - frontiersin.org
Spin–charge conversion (SCC) leads to the driving principle of spintronics devices, such as
non-volatile magnetic memory and energy harvesting devices from light, sound, and heat to …

Spin-charge interconversion in heterostructures based on group-IV semiconductors

F Bottegoni, C Zucchetti, G Isella, M Bollani… - La Rivista del Nuovo …, 2020 - Springer
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Photon Energy‐Dependent Optical Spin‐Orbit Torque in Heavy Metal–Ferromagnet Bilayers

C Wang, Y Xu, Y Liu - Advanced Functional Materials, 2024 - Wiley Online Library
The manipulation of magnetization through optically generated ultrafast spin currents is a
fascinating area that needs a thorough understanding for its potential future applications. In …

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi

K Kudo, M Yamada, S Honda, Y Wagatsuma… - Applied Physics …, 2021 - pubs.aip.org
We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor-based lateral spin-valve devices. From first-principles calculations, we …

Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films

C Zucchetti, MT Dau, F Bottegoni, C Vergnaud… - Physical Review B, 2018 - APS
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field
of spintronics as a means to detect spin currents or manipulate the magnetization of …

Doping dependence of the electron spin diffusion length in germanium

C Zucchetti, M Bollani, G Isella, M Zani, M Finazzi… - APL Materials, 2019 - pubs.aip.org
We have investigated the electron spin diffusion length at room temperature in bulk n-doped
germanium as a function of the doping concentration. To this purpose, we exploit a nonlocal …

Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions

F Bottegoni, C Zucchetti, G Isella, E Pinotti… - Journal of Applied …, 2018 - pubs.aip.org
We show that the photon energy dependence of the photo-induced inverse spin-Hall effect
(ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly …

Hole and electron spin lifetime in lightly n-doped silicon at low temperatures

C Zucchetti, F Scali, A Ballabio, M Bollani… - Applied Physics …, 2024 - pubs.aip.org
We report on photoinduced inverse spin-Hall effect (ISHE) measurements as a function of
the incident photon energy in the 4–50 K temperature range for a Pt/n-doped Si junction …

Inverse spin-Hall effect in GeSn

A Marchionni, C Zucchetti, F Ciccacci, M Finazzi… - Applied Physics …, 2021 - pubs.aip.org
Due to the long spin lifetime and its optical and electrical properties, GeSn is a promising
candidate for the integration of spintronics, photonics, and electronics. Here, we investigate …

Theoretical prediction and experimental demonstration of inter-valley scattering induced Inverse Spin Hall effect for hot electrons in GaAs

P Mudi, SK Khamari, TK Sharma - Journal of Applied Physics, 2019 - pubs.aip.org
Realization of the Inverse Spin Hall Effect (ISHE) with hot electrons in direct bandgap
semiconductors is an intriguing puzzle. Here, we report the influence of steady state carrier …