In the past 10years, ZnO as a semiconductor has attracted considerable attention due to its
unique properties, such as high electron mobility, wide and direct band gap and large …

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its
nanostructures, holds promise for the development of photonic devices. The recent …

We show for ZnO a correlation between the ionized donor bound exciton D+ X
recombinations I 0, I 1, and I 2 and the neutral donor bound exciton D 0 X recombinations I 6 …

Nitrogen-doped and undoped ZnO films were grown by thermal atomic layer deposition
(ALD) under oxygen-rich conditions. Low-temperature photoluminescence spectra reveal a …

We report the first results of the low-temperature photoluminescence study on polycrystal
zinc oxide (ZnO) films obtained by atomic layer deposition at 100 C, 130 C and 200 C …

We have investigated photoluminescence (PL) from Sb-doped p-type ZnO films obtained by
thermal oxidation of the Zn-Sb starting material. Very well resolved PL spectra were …

High-quality radio frequency–sputtered ZnO were grown on Si substrates at 400° C at
various partial gas pressures (Ar/Ar+ O2). Subsequently, to remove as-grown defects, high …

Here, we report high output voltage generation by employing p-type ZnO nanowires as an
integral part of vertically integrated nanowire generators (VING). Study has been carried out …

Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability,
stability, and reproducibility of p-type doping, which is the main hindrance in realization of …

Nominally undoped ZnO nanorods, which have been grown with intentionally incorporated
large concentrations of zinc and oxygen vacancies, are studied with electron microscopy …