Process development of low-loss LPCVD silicon nitride waveguides on 8-inch wafer
Z Li, Z Fan, J Zhou, Q Cong, X Zeng, Y Zhang, L Jia - Applied Sciences, 2023 - mdpi.com
Silicon nitride is a material compatible with CMOS processes and offers several advantages,
such as a wide transparent window, a large forbidden band gap, negligible two-photon …
such as a wide transparent window, a large forbidden band gap, negligible two-photon …
Damascene Process Development for Low-Loss Photonics Devices with Applications in Frequency Comb
Silicon nitride (SiN) is emerging as a material of choice for photonic integrated circuits (PICs)
due to its ultralow optical losses, absence of two-photon absorption in telecommunication …
due to its ultralow optical losses, absence of two-photon absorption in telecommunication …
[PDF][PDF] 8 英寸晶圆低损耗厚氮化硅波导的工艺开发
丛庆宇， 李赵一， 周敬杰， 范作文， 贾连希… - ACTA PHOTONICA …, 2024 - researching.cn
在8 英寸晶圆上制备氮化硅膜厚度超过400 nm 时, 产生的拉伸应力会使薄膜产生裂纹, 为此,
采用大马士革工艺, 通过低压化学气相沉积分两步沉积, 抛光氮化硅薄膜, 同时结合棋盘格结构 …
采用大马士革工艺, 通过低压化学气相沉积分两步沉积, 抛光氮化硅薄膜, 同时结合棋盘格结构 …