Detailed review on c-Si/a-Si: H heterojunction solar cells in perspective of experimental and simulation
V Kanneboina - Microelectronic Engineering, 2022 - Elsevier
The crystalline silicon (c-Si) based photovoltaic (PV) technology is most dominated among
other PV technologies. The world record highest efficiency of 26.7% and 26.1% on n & p …
other PV technologies. The world record highest efficiency of 26.7% and 26.1% on n & p …
A fluorine based plasma surface modification process opens up a new avenue to improve the film conductivity and optoelectronic properties of Sb2Se3 broadband …
B Zhao, K Li, Y Ren, T Dai, X Liu - Solar Energy, 2020 - Elsevier
Abstract Antimony selenide (Sb 2 Se 3) emerges with great potential for broad-spectrum
photonics due to the moderate band gap and excellent optical properties. However, the …
photonics due to the moderate band gap and excellent optical properties. However, the …
Electrothermal analysis of CVD-grown hBN heat spreader using Pt/Cu/Ti micro-coil
NJN Bulya Nazim, MF Abdullah, N Soriadi… - Journal of Electronic …, 2022 - Springer
This article presents the electrothermal analysis of hexagonal boron nitride (hBN) grown by
chemical vapor deposition (CVD) as a two-dimensional insulator heat spreader. The …
chemical vapor deposition (CVD) as a two-dimensional insulator heat spreader. The …
Maximizing the thermal hotspot reduction by optimizing the thickness of multilayer hBN heat spreader
This article investigates the thickness-dependent heat spreading performance of multilayer
hexagonal boron nitride (hBN). The growth by a cold-wall chemical vapor deposition system …
hexagonal boron nitride (hBN). The growth by a cold-wall chemical vapor deposition system …
Spectroscopic ellipsometry investigation to study the microstructure evolution in boron-doped amorphous silicon films as a result of hydrogen dilution
V Kanneboina, P Agarwal - SN Applied Sciences, 2021 - Springer
Spectroscopic ellipsometry (SE) is a sophisticated technique to find the optical constants,
bandgap and microstructure of thin layer. SE is used to study the microstructure evolution in …
bandgap and microstructure of thin layer. SE is used to study the microstructure evolution in …
Excellent response and recovery time of photo-detectors based on Nc-Si: H films grown by using hot wire method
In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon
(nc-Si: H) thin films by hot wire method. The obtained thin films were characterized by using …
(nc-Si: H) thin films by hot wire method. The obtained thin films were characterized by using …
[PDF][PDF] ES Materials & Manufacturing
Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown
by Using Hot Wire Method Page 1 Excellent Response and Recovery Time of Photo-Detectors …
by Using Hot Wire Method Page 1 Excellent Response and Recovery Time of Photo-Detectors …