Radiative efficiency and charge‐carrier lifetimes and diffusion length in polycrystalline CdSeTe heterostructures
CdTe‐based photovoltaics is a rapidly developing energy technology with one of the lowest
levelized costs of electricity. But nonradiative Shockley–Read–Hall (SRH) recombination …
levelized costs of electricity. But nonradiative Shockley–Read–Hall (SRH) recombination …
Phonon-assisted optical absorption of SiC polytypes from first principles
X Zhang, E Kioupakis - Physical Review B, 2023 - APS
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and
optoelectronic applications. While experimental measurements of the phonon-assisted …
optoelectronic applications. While experimental measurements of the phonon-assisted …
An optimized Graphene/4H-SiC/Graphene MSM UV-photodetector operating in a wide range of temperature
In this paper,. an accurate analytical model has been developed to optimize the
performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal …
performance of an Interdigitated Graphene Electrode/p-silicon carbide (IGE/p-4H-SiC) Metal …
Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range
Silicon carbide (SiC), which is the leading representative of the third-generation of
semiconductors, possesses many excellent physical properties. However, its advantages …
semiconductors, possesses many excellent physical properties. However, its advantages …
[HTML][HTML] Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC
K Tanaka, M Kato - AIP Advances, 2023 - pubs.aip.org
In recent years, 4H-SiC power devices have been widely employed in power electronic
systems owing to their superior performance to Si power devices. However, stacking faults in …
systems owing to their superior performance to Si power devices. However, stacking faults in …
Photoluminescence kinetics for monitoring photoinduced processes in perovskite solar cells
The research on halide perovskites is in its peak activity at the moment due to the material's
potential application in photovoltaics. It is well known that slow processes, from seconds to …
potential application in photovoltaics. It is well known that slow processes, from seconds to …
Bismuth oxysulfide thin films for light and humidity sensing
Bismuth oxysulfide (BOS) films were formed on dielectric glass substrates by the chemical
bath deposition. They have a high sensitivity to moisture content and demonstrate the …
bath deposition. They have a high sensitivity to moisture content and demonstrate the …
Plasmon-enhanced Graphene/4H–SiC/graphene metal-semiconductor-metal ultraviolet photodetector: Concept and optimization
In this paper, a hybrid approach that combines a light trapping formalism and a
metaheuristic optimization approach is suggested to enhance speed and sensing …
metaheuristic optimization approach is suggested to enhance speed and sensing …
Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0. 95Sn0. 05 epilayer
The development of new technology, which would be able to shift photosensitivity of Si
devices to the mid-infrared range, preserving the benefits of cheap silicon readout circuits, is …
devices to the mid-infrared range, preserving the benefits of cheap silicon readout circuits, is …
Temperature-and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC
P Ščajev, K Jarašiūnas - Journal of Physics D: Applied Physics, 2013 - iopscience.iop.org
Time-resolved optical'pump-probe'techniques were applied to monitor carrier dynamics in
CVD-grown 4H-SiC for investigation of carrier diffusivity and recombination rate over a wide …
CVD-grown 4H-SiC for investigation of carrier diffusivity and recombination rate over a wide …