As the scaling technology in the silicon-based semiconductor industry is approaching
physical limits, it is necessary to search for proper materials to be utilized as alternatives for …

A personal communications service/wide-band code division multiple access (PCS/W-
CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a …

To accommodate growing user demand for faster data rates and extensive connectivity,
modern wireless communication systems must evolve to support a sharply increasing …

A 2.4-GHz CMOS power amplifier (PA) with an output power 20 dBm using 0.25-μm 1P5M
standard CMOS process is presented. The PA uses an integrated diode connected NMOS …

Techniques for improving linearity of amplifiers are described. In an exemplary design, an
amplifier (eg, a power amplifier) may include a plurality of transistors coupled in a stack and …

Highly efficient power amplifiers (PAs) and associated linearization techniques have been
developed to accommodate the explosive growth in the data transmission rate and …

In this paper, dc sourcing capability (DSC), which is a very important consideration in design
of active bias circuits for power amplifiers based on bipolar technologies, will be explained …

A phase-delay cold-FET pre-distortion linearizer technique is proposed to improve the gain
compensation ability compared with the conventional cold-FET pre-distortion linearizer. The …

In this letter, we present a linear InGaP/GaAs HBT power amplifier (PA) with parallel-
combined transistors for small-cell applications. Ballast resistors with bypass resistors and …

This paper describes the design and experimental results for a 3.2-V operation single-chip
AlGaAs/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit …