Impact of high-k spacer on device performance of nanoscale underlap fully depleted SOI MOSFET
The fully depleted Silicon-On-Insulator MOSFETs (FD-SOI) have shown high immunity to
short channel effects compared to conventional bulk MOSFETs. The inclusion of gate …
short channel effects compared to conventional bulk MOSFETs. The inclusion of gate …
Analysis of underlap strained silicon on insulator MOSFET for accurate and compact modeling
Recently, transistors with an underlapped gate structure have been widely studied to
overcome several challenges associated with nanoscale devices. In this work, underlap …
overcome several challenges associated with nanoscale devices. In this work, underlap …
Comprehending and Analyzing the Quasi-Ballistic Transport in Ultra Slim Nano-MOSFET through Conventional Scattering Model
Y Swami, S Rai - Journal of Nanoelectronics and …, 2019 - ingentaconnect.com
In the last decade, the alarming advancement in the terrain of microelectronics has pushed
the technology length of MOSFETs into nano-scale and the operating frequency in hundreds …
the technology length of MOSFETs into nano-scale and the operating frequency in hundreds …
Threshold voltage variability induced by spacer-and resist-defined patterning techniques in nanoscale FinFETs
RS Rathore, R Sharma… - Journal of Micro …, 2017 - spiedigitallibrary.org
In aggressively scaled devices, FinFET technology has become more prone to line-edge
roughness (LER) induced threshold voltage variability. To explain this challenge, all …
roughness (LER) induced threshold voltage variability. To explain this challenge, all …
Lateral Nanoelectromechanical Relays for Reconfigurable Logic
WY Choi, HI Kwon, K Kim - Journal of Nanoelectronics and …, 2017 - ingentaconnect.com
This study proposes novel structures and a novel process for lateral nanoelectromechanical
(NEM) relays and experimentally verifies their performance. Lateral NEM relays have a …
(NEM) relays and experimentally verifies their performance. Lateral NEM relays have a …