[图书][B] Pixel detectors: From fundamentals to applications
L Rossi - 2006 - books.google.com
Pixel detectors are a particularly important class of particle and radiation detection devices.
They have an extremely broad spectrum of applications, ranging from high-energy physics …
They have an extremely broad spectrum of applications, ranging from high-energy physics …
Tradeoffs and optimization in analog CMOS design
DM Binkley - 2007 14th International Conference on Mixed …, 2007 - ieeexplore.ieee.org
The selection of drain current, inversion coefficient, and channel length for each MOS device
in an analog circuit results in significant tradeoffs in performance. The selection of inversion …
in an analog circuit results in significant tradeoffs in performance. The selection of inversion …
[图书][B] Teilchendetektoren
H Kolanoski, N Wermes - 2016 - Springer
Neue Ideen und Konzepte in der Entwicklung von Teilchendetektoren waren oft
Voraussetzung für wichtige Experimente, die zu Entdeckungen oder zu neuen …
Voraussetzung für wichtige Experimente, die zu Entdeckungen oder zu neuen …
MOSFET optimization in deep submicron technology for charge amplifiers
G De Geronimo, P O'Connor - IEEE Symposium Conference …, 2004 - ieeexplore.ieee.org
The optimization of the input MOSFET for charge amplifiers in deep submicron technologies
is discussed. After a review of the traditional approach, the impact of properly modeling the …
is discussed. After a review of the traditional approach, the impact of properly modeling the …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
S Bonaldo, T Ma, S Mattiazzo, A Baschirotto… - Nuclear Instruments and …, 2022 - Elsevier
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
S Bonaldo, DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
Effects of interface traps and hydrogen on the low-frequency noise of irradiated MOS devices
A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18/spl mu/m CMOS technology
L Chen, DM Gingrich - IEEE Transactions on Nuclear Science, 2005 - ieeexplore.ieee.org
Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial
0.18/spl mu/m complementary metal-oxide-semiconductor technology. The static, small …
0.18/spl mu/m complementary metal-oxide-semiconductor technology. The static, small …
Optimizing drain current, inversion level, and channel length in analog CMOS design
DM Binkley, BJ Blalock, JM Rochelle - Analog Integrated Circuits and …, 2006 - Springer
This paper describes a methodology for selecting drain current, inversion level (represented
by inversion coefficient), and channel length for optimum performance tradeoffs in analog …
by inversion coefficient), and channel length for optimum performance tradeoffs in analog …
Comparison of ionizing radiation effects in 0.18 and 0.25/spl mu/m CMOS technologies for analog applications
We present a comparative study of ionizing radiation effects in 0.18 and 0.25/spl mu/m
CMOS transistors, with the goal of evaluating the impact of device scaling in the design of …
CMOS transistors, with the goal of evaluating the impact of device scaling in the design of …