Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Resistive-based gas sensors for detection of benzene, toluene and xylene (BTX) gases: a review

A Mirzaei, JH Kim, HW Kim, SS Kim - Journal of Materials Chemistry C, 2018 - pubs.rsc.org
Benzene, toluene, and xylene gases, which are known collectively as BTX gases, are
volatile organic compounds (VOCs) that are used extensively in many industrial products …

Bioinspired bio-voltage memristors

T Fu, X Liu, H Gao, JE Ward, X Liu, B Yin… - Nature …, 2020 - nature.com
Memristive devices are promising candidates to emulate biological computing. However, the
typical switching voltages (0.2-2 V) in previously described devices are much higher than …

[PDF][PDF] Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

F Miao, JP Strachan, JJ Yang, MX Zhang, I Goldfarb… - Adv. Mater, 2011 - academia.edu
Present memory technologies, including DRAM (dynamic random access memory), SRAM
(static random access memory), and flash, are potentially approaching their scalability limits …

Polymer memristor for information storage and neuromorphic applications

Y Chen, G Liu, C Wang, W Zhang, RW Li, L Wang - Materials Horizons, 2014 - pubs.rsc.org
Polymer materials have been considered as promising candidates for the implementation of
memristor devices due to their low-cost, easy solution processability, mechanical flexibility …

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

J Yao, J Lin, Y Dai, G Ruan, Z Yan, L Li, L Zhong… - Nature …, 2012 - nature.com
Transparent electronic memory would be useful in integrated transparent electronics.
However, achieving such transparency produces limits in material composition, and hence …

In situ imaging of the conducting filament in a silicon oxide resistive switch

J Yao, L Zhong, D Natelson, JM Tour - Scientific reports, 2012 - nature.com
The nature of the conducting filaments in many resistive switching systems has been
elusive. Through in situ transmission electron microscopy, we image the real-time formation …

The role of electrochemical phenomena in scanning probe microscopy of ferroelectric thin films

SV Kalinin, S Jesse, A Tselev, AP Baddorf, N Balke - Acs Nano, 2011 - ACS Publications
Applications of piezoresponse force microscopy and conductive atomic force microscopy to
ferroelectric thin films necessitate understanding of the possible bias-induced …

Electrically tailored resistance switching in silicon oxide

A Mehonic, S Cueff, M Wojdak, S Hudziak… - …, 2012 - iopscience.iop.org
Resistive switching in a metal-free silicon-based material offers a compelling alternative to
existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of …

Bipolar resistive switching and charge transport in silicon oxide memristor

AN Mikhaylov, AI Belov, DV Guseinov… - Materials Science and …, 2015 - Elsevier
Reproducible bipolar resistive switching has been studied in SiO x-based thin-film memristor
structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO 2/Si …