Terahertz electronic devices

F Aniel, G Auton, D Cumming, M Feiginov… - Springer Handbook of …, 2022 - Springer
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …

Compact terahertz SPICE/ADS model

X Liu, T Ytterdal, VY Kachorovskii… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
We describe a compact terahertz (THz) SPICE/advanced design system (ADS) model based
on the extended Enz-Krummenacher-Vittoz (EKV) MOSFET model with channel …

Compact terahertz SPICE model: Effects of drude inductance and leakage

X Liu, K Dovidenko, J Park, T Ytterdal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We describe an improved compact SPICE/ADS model validated for the terahertz (THz)
frequency range in a large dynamic range. The model validation was done by comparing the …

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

S Preu, M Mittendorff, S Winnerl, H Lu, AC Gossard… - Optics express, 2013 - opg.optica.org
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A
fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz …

[PDF][PDF] 室温微测辐射热计太赫兹探测阵列技术研究进展(特邀)

王军, 蒋亚东 - 红外与激光工程, 2019 - researching.cn
摘要院在室温太赫兹探测技术领域中, 热敏微桥结构的太赫兹探测器具有探测波段宽,
阵列规模大, 集成度高, 实时成像等显著特点. 文中对室温太赫兹探测技术 …

TCAD model for TeraFET detectors operating in a large dynamic range

X Liu, MS Shur - IEEE Transactions on Terahertz Science and …, 2019 - ieeexplore.ieee.org
Technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and
silicon-on-insulator (SOI) TeraFETs are in good agreement with the measured current …

Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends

A Di Gaspare, R Casini, V Foglietti, V Giliberti… - Applied Physics …, 2012 - pubs.aip.org
We studied terahertz current oscillations induced by a frequency-tunable radiation source in
a AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor channel. A planar antenna …

Enhancing the catalytic desulfurization capacity of CuO-LaCoO3 using two dielectric barrier discharge configurations

Z Ning, R Hu, R Zhu, S Gong, Z Yang, L Tang - Molecular Catalysis, 2022 - Elsevier
Developing efficient and economical methods to treat low concentrations of sulfur dioxide,
which is commonly found in electrolytic aluminum flue gas and is typically emitted directly to …

External excitation of hybrid plasma resonances in a gated semiconductor slab: An analytical study

H Marinchio, C Palermo, A Mahi, L Varani… - Journal of Applied …, 2014 - pubs.aip.org
We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …

Investigation of high-frequency small-signal characteristics of FETs/HEMTs

E Starikov, P Shiktorov… - … Science and Technology, 2012 - iopscience.iop.org
Hydrodynamic calculations of the components of small-signal admittance and impedance
matrix are performed for InGaAs HEMT. Modifications of high-frequency small-signal …