Variations in the band gap of semiconducting glassy chalcogenides with composition

R Neffati, I Boukhris, I Kebaili… - Philosophical …, 2021 - Taylor & Francis
Semiconducting glassy chalcogenides (ChGs) have broad technological applications owing
to the ability to tune their band gap through composition change. However, there is a lack of …

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Q Yin, L Chen - Nanotechnology, 2020 - iopscience.iop.org
In this work, we investigated the structural and conductivity stability of Ga–Sb thin films for
phase change memory (PCM). The mass density and thickness change are significant for …

Tin antimony sulfide (Sn6Sb10S21) thin films by heating chemically deposited Sb2S3/SnS layers: studies on the structure and their optoelectronic properties

S Devasia, S Shaji, DA Avellaneda… - Journal of Alloys and …, 2020 - Elsevier
Tin antimony sulfide thin films (Sn 6 Sb 10 S 21) were obtained on glass substrates by
heating chemical bath deposited Sb 2 S 3/SnS layers. The report primarily focuses on the …

Multilayer SnSb4–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

R Liu, X Zhou, J Zhai, J Song, P Wu, T Lai… - … Applied Materials & …, 2017 - ACS Publications
A multilayer thin film, comprising two different phase change material (PCM) components
alternatively deposited, provides an effective means to tune and leverage good properties of …

Crystallization kinetics, glass transition kinetics, and thermal stability of Se70− xGa30Inx (x= 5, 10, 15, and 20) semiconducting glasses

MMA Imran - Physica B: Condensed Matter, 2011 - Elsevier
Crystallization and glass transition kinetics of Se70− xGa30Inx (x= 5, 10, 15, and 20)
semiconducting chalcogenide glasses were studied under non-isothermal condition using a …

Correlation of some opto-electrical properties of Se–Te–Sn glassy semiconductors with the average single bond energy and the average electronegativity

OA Lafi - Journal of Alloys and Compounds, 2016 - Elsevier
Studies of some electrical and optical properties of Se 90 Te 10− x Sn x (x= 2, 4, 6 and 8)
glassy alloys, in bulk and thin film forms, were performed at room temperature. Pellets of a …

Chemical bond approach to glass transition temperature and crystallization activation energy in Se90In10− xSnx (2≤ x≤ 8) semiconducting glasses

OA Lafi, MMA Imran, KA Ma'rouf - Materials Chemistry and Physics, 2008 - Elsevier
Ternary chalcogenide glasses Se90In10− xSnx (2≤ x≤ 8at.%) have been prepared by melt
quenching technique. Differential scanning calorimeter (DSC) has been used to determine …

Glass transition kinetics and optical band gap in Se85− xSb15Snx (x= 10, 11, 12.5, and 13) chalcogenide glasses

MMA Imran, OA Lafi - Materials Chemistry and Physics, 2011 - Elsevier
Se85− xSb15Snx (10≤ x≤ 13) chalcogenide glasses were prepared by melt quenching
technique. The glass transition temperature Tg of the samples was recorded at different …

Effect of Sn Concentration on the Structural and Thermal Properties of SnxSb20Se80−x Glasses

ZS Khalifa, SH Mohamed - Journal of Electronic Materials, 2023 - Springer
Abstract Sn x Sb20Se80− x bulk glasses were prepared using the well-known melt
quenching technique, where x was taken as 7.5 at.%, 9.5 at.%, 11.5 at.% and 13 at.%. X-ray …

Thermal characterization of Se85− xSb15Snx (10≤ x≤ 13) chalcogenide glasses

MMA Imran - Physica B: Condensed Matter, 2011 - Elsevier
Results of crystallization kinetics, viscosity, specific heat, thermal stability, and glass forming
ability of Se85− xSb15Snx (x= 10, 11, 12.5, and 13) chalcogenide glasses, using differential …