Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
High-quality-factor AlGaAs-on-sapphire microring resonators
We realize an AlGaAs-on-sapphire platform through-assisted direct wafer bonding and
substrate removal processes. The direct wafer bonding process is optimized concerning the …
substrate removal processes. The direct wafer bonding process is optimized concerning the …
Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer
Integration of heterogeneous materials is crucial for many nanophotonic devices. The
integration is often achieved by bonding using polymer adhesives or metals. A much better …
integration is often achieved by bonding using polymer adhesives or metals. A much better …
Novel capacitive sensing system design of a microelectromechanical systems accelerometer for gravity measurement applications
Z Li, WJ Wu, PP Zheng, JQ Liu, J Fan, LC Tu - Micromachines, 2016 - mdpi.com
This paper presents an in-plane sandwich nano-g microelectromechanical systems (MEMS)
accelerometer. The proof-mass fabrication is based on silicon etching through technology …
accelerometer. The proof-mass fabrication is based on silicon etching through technology …
Adhesive wafer bonding with ultra-thin intermediate polymer layers
Wafer bonding methods with ultra-thin intermediate bonding layers are critically important in
heterogeneous 3D integration technologies for many NEMS and photonic device …
heterogeneous 3D integration technologies for many NEMS and photonic device …
Design and analysis of 2-μm InGaSb/GaSb quantum well Lasers integrated onto Silicon-on-Insulator (SOI) waveguide circuits through an Al2O3 bonding layer
GaSb-based quantum well (QW) laser diode, with emission wavelength~ 2 μm, integrated
onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al 2 …
onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al 2 …
Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation
A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al 2 O 3 as the
intermediate homogenous bonding layer is reported. Intermediate film thickness is varied …
intermediate homogenous bonding layer is reported. Intermediate film thickness is varied …
Low temperature photosensitive polyimide based insulating layer formation for microelectromechanical systems applications
J Fan, T Zhu, WJ Wu, SH Tang, JQ Liu… - Journal of Electronic …, 2015 - Springer
Photosensitive polyimide (PSPI) based insulating layer fabrication for
microelectromechanical systems (MEMS) application has been systematically investigated …
microelectromechanical systems (MEMS) application has been systematically investigated …
[HTML][HTML] High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application
J Fan, LC Tu, CS Tan - AIP Advances, 2014 - pubs.aip.org
This work systematically investigated a high-κ Al 2 O 3 material for low temperature wafer-
level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al 2 O …
level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al 2 O …
UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding
Direct bonding of InP dies to Si wafer at low temperature utilizing Al 2 O 3 high-κ dielectric as
the interfacial material for homogeneous bonding is reported. The bonding technique is …
the interfacial material for homogeneous bonding is reported. The bonding technique is …