Emerging 2D metal oxides: from synthesis to device integration
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …
optoelectronics due to their intriguing physical properties. In this review, an overview of …
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …
promising candidates for next-generation electronics owing to their atomically thin structures …
Ohmic contact engineering for two-dimensional materials
One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
Band offsets, Schottky barrier heights, and their effects on electronic devices
J Robertson - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
The role of heterointerfaces and subgap energy states on transport mechanisms in silicon heterojunction solar cells
P Procel, H Xu, A Saez, C Ruiz‐Tobon… - Progress in …, 2020 - Wiley Online Library
The contact resistivity is a key parameter to reach high conversion efficiency in solar cells,
especially in architectures based on the so‐called carrier‐selective contacts. The …
especially in architectures based on the so‐called carrier‐selective contacts. The …
Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the
Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by …
Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by …
Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
This paper reports on the modulation of Schottky barrier heights (SBH) on three different
orientations of β-Ga 2 O 3 by insertion of an ultra-thin SiO 2 dielectric interlayer at the metal …
orientations of β-Ga 2 O 3 by insertion of an ultra-thin SiO 2 dielectric interlayer at the metal …
Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors
Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising
materials for next-generation electronics due to their excellent semiconducting properties …
materials for next-generation electronics due to their excellent semiconducting properties …
Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
S Gupta, P Paramahans Manik… - Journal of Applied …, 2013 - pubs.aip.org
Metal-induced-gap-states model for Fermi-level pinning in metal-semiconductor contacts
has been extended to metal-interfacial layer (IL)-semiconductor (MIS) contacts using a …
has been extended to metal-interfacial layer (IL)-semiconductor (MIS) contacts using a …