Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review
This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …
Correlation between growth interruption and indium segregation in InGaN MQWs
M Dmukauskas, J Mickevičius, D Dobrovolskas… - Journal of …, 2020 - Elsevier
InGaN/GaN multiple quantum wells (MQWs) with the same indium content and QW widths
were grown by metalorganic chemical vapor deposition using metal precursor flow …
were grown by metalorganic chemical vapor deposition using metal precursor flow …
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
J Mickevičius, D Dobrovolskas, R Aleksiejūnas… - Journal of Crystal …, 2017 - Elsevier
To shift the emission band to long wavelength side, InGaN/GaN multiple quantum wells
were grown by metalorganic chemical vapor deposition (MOCVD) using pulsed delivery of …
were grown by metalorganic chemical vapor deposition (MOCVD) using pulsed delivery of …
Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices
Optimization of photoluminescence intensity of green-emitting InGaN/GaN multiple quantum
wells deposited on a template consisting of low-indium-content short-period superlattice was …
wells deposited on a template consisting of low-indium-content short-period superlattice was …
Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range
J Mickevičius, D Dobrovolskas, J Aleknavičius… - Journal of …, 2018 - Elsevier
Capabilities of pulsed mode in metalorganic chemical vapor deposition in growing InGaN-
based multiple quantum wells (QWs) emitting in a wide spectral range by varying deposition …
based multiple quantum wells (QWs) emitting in a wide spectral range by varying deposition …
Micro-structural and optical investigation of semi-polar (11-22) III-nitrides overgrown on regularly arrayed micro-rods
Y Zhang - 2017 - etheses.whiterose.ac.uk
This project aims to systematically study the micro-structure and optical properties of semi-
polar (11-22) GaN with a step-change in crystal quality achieved by means of overgrowth on …
polar (11-22) GaN with a step-change in crystal quality achieved by means of overgrowth on …
Scanning near-field optical microscopy of AlGaN epitaxial layers
S Marcinkevičius, R Jain, M Shatalov… - UV and Higher …, 2016 - spiedigitallibrary.org
Scanning near-field PL spectroscopy was applied to study spatial variations of the emission
spectra of AlGaN epilayers with AlN molar fractions between 0.3 and 0.7. Experiments were …
spectra of AlGaN epilayers with AlN molar fractions between 0.3 and 0.7. Experiments were …