This article presents an ultra-high-speed memristor-based non-volatile Ternary Content
Addressable Memory (TCAM) for use in real-time and big-data applications that require low …

Ternary Content Addressable Memory (TCAM) is used in applications that require a low
power dissipation and fast data retrieval. This paper presents a domain wall-based …

Content Addressable Memory (CAM) is widely used in applications where searching a
specific pattern of data is a major operation. Conventional CAMs suffer from area, power …

Magnetoresistive memories, such as spin-transfer torque random access memory and
magnetic latches (M-latch), are emerging memory technologies that offer attractive features …

This paper presents the design of a content addressable memory (CAM) cell. This cell
utilizes a phase change memory (PCM) as a storage element and an ambipolar transistor for …

This paper proposes an efficient and robust design of content addressable memory (CAM)
system. Design metrics, such as search time, power dissipation, power-delay product (PDP) …

Content-addressable memories (CAMs) allow searching a pattern, processing in parallel all
the data stored. Beyond-CMOS technologies can provide new opportunities to improve CAM …

Content addressable memory (CAM) can perform high-speed table look-up with bit level
masking capability. This feature makes CAMs extremely attractive for high-speed packet …

Currently, non-volatile content-addressable memory (NV-CAM) based on magnetic tunnel
junction (MTJ) has huge potential in search applications, owing to its non-volatility, zero …

This research work presents a non-volatile Content Addressable Memory (CAM) cell to
store/hold1-bit data. The proposed scheme explores the nonvolatile nature of the spin …