The number of memory faults operating in radiation environments increases with the
electronic device miniaturization. One-dimensional (1D) Error Correction Codes (ECCs) are …

The evolution of microelectronics boosts more scalable and complex circuit designs,
providing high processing speed and greater storage capacity. However, reliability issues …

Advances in integrated circuit production technologies have reduced device sizes, leading
to corresponding scaling in electrical characteristics, such as threshold voltage. This scaling …

Finite State Machine (FSM) is widely used in electronic systems and its reliability is critical to
the system. Ionizing radiation induced soft error is one of the major concerns in the design of …

Column-Line-Code (CLC) is an Error Correction Code (ECC) designed to correct multiple
errors in memory devices for critical applications. CLC has originally two decoder modes …

The diversity of nanosatellite applications is increasingly attracting the scientific community's
attention. The main component of these satellites is the OnBoard Computer (OBC), which is …

The radiation sensitivity of memory cells increases dramatically as CMOS manufacture
technology scales down; therefore, the reliability of memories has become a challenge. 3D …

SRAM memory systems are suffering from an increase in data due to the aggressive CMOS
integration density. The frequency of Multiple Cell Upsets (MCUs) on SRAM memory is …

The integrated circuit shrinkage increases the probability and the number of errors in
memories due to the increase in the sensitivity to electromagnetic radiation. Critical …

The shrinking of memory devices increased the probability of system failures due to the
higher sensitivity to electromagnetic radiation. Critical memory systems employ fault-tolerant …