Terahertz photoconductive antenna based on a topological insulator nanofilm

KA Kuznetsov, DA Safronenkov, PI Kuznetsov… - Applied Sciences, 2021 - mdpi.com
In this study, the efficient generation of terahertz radiation by a dipole photoconductive
antenna, based on a thin island film of a topological insulator, was experimentally …

Improved InGaAs and InGaAs/InAlAs photoconductive antennas based on (111)-oriented substrates

K Kuznetsov, A Klochkov, A Leontyev, E Klimov… - Electronics, 2020 - mdpi.com
The terahertz wave generation by spiral photoconductive antennas fabricated on low-
temperature In0. 5Ga0. 5As films and In0. 5Ga0. 5As/In0. 5Al0. 5As superlattices is studied …

Migration-Enhanced Epitaxial Growth of InAs/GaAs Short-Period Superlattices for THz Generation

R Chen, X Li, H Du, J Yan, C Kong, G Liu, G Lu… - Nanomaterials, 2024 - mdpi.com
The low-temperature-grown InGaAs (LT-InGaAs) photoconductive antenna has received
great attention for the development of highly compact and integrated cheap THz sources …

Photoconductive antennas based on epitaxial films In0. 5Ga0. 5As on GaAs (1 1 1) A and (1 0 0) A substrates with a metamorphic buffer

KA Kuznetsov, GB Galiev, GK Kitaeva… - Laser Physics …, 2018 - iopscience.iop.org
The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on
the low-temperature and high-temperature grown undoped and Si-doped In 0.5 Ga 0.5 As …

THz radiation of photoconductive antennas based on {LT-GaAa/GaAa: Si} superlattice structures

AN Klochkov, EA Klimov, PM Solyankin… - Optics and …, 2020 - Springer
A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on
(111) A-oriented substrates is proposed for fabrication of THz photoconductive antennas …

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111) A GaAs Substrates

AN Klochkov, GB Galiev, EA Klimov… - … status solidi (b), 2023 - Wiley Online Library
Utilizing the amphoteric property of silicon impurity in GaAs (111) A for acceptor doping of
low‐temperature‐grown (LTG‐) GaAs films and LTG‐GaAs‐based heterostructures for THz …

[HTML][HTML] Generation of terahertz radiation from the island films of topological insulator Bi2-xSbxTe3-ySey

KA Kuznetsov, GK Kitaeva, PI Kuznetsov… - AIP advances, 2019 - pubs.aip.org
The aim of the research was the studying of the topological insulators Bi 2-x Sb x Te 3-y Se y
thin films with the different thickness and chemical composition. The obtained time …

Terahertz photoconductive antennas based on silicon-doped GaAs (111) A

E Klimov, A Klochkov, P Solyankin… - … Journal of Modern …, 2024 - World Scientific
In this study we investigate a relatively new material for terahertz (THz) photoconductive
antennas (PCAs): GaAs epitaxial films grown on (111) A-oriented semi-insulated GaAs …

Generation of THz Radiation by (100),(110), and (111) A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas

EA Klimov, AN Klochkov, PM Solyankin… - Bulletin of the Lebedev …, 2024 - Springer
We report the effect of the built-in electric field emerging in elastically strained multiple
InGaAs/GaAs quantum wells on the THz generation efficiency upon irradiation of the surface …

Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP (100) and InP (111) A Substrates

GB Galiev, AL Vasiliev, IS Vasil'evskii… - Crystallography …, 2020 - Springer
The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam
epitaxy (MBE) at a temperature of 200° C on InP substrates with the crystallographic …