Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Oxidation treatment creating a well-ordered crystalline structure has been shown to provide
a major improvement for III–V semiconductor/oxide interfaces in electronics. We present this …

The physical and chemical properties of semiconductor nanowires are significantly
influenced by their surface structure and morphology. This can be understood in that …

Laterally grown In x Ga 1− x As nanowires (NWs) are promising candidates for radio
frequency and quantum computing applications, which, however, can require atomic scale …

This dissertation focus on the atomic-scale characterization of the surface properties and
electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the …

This study explores the influence of lattice matching on the behavior and electronic structure
of bismuth (Bi) thin films on semiconductor substrates such as indium antimonide (InSb). My …

Innovative design and materials are needed to satisfy the demand for efficient and scalable
devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar …

Canada Materials can fail when subjected to cyclic loading at stress levels much lower than
the ultimate tensile strength or yielding limit, which is known as mechanical fatigue …

Les semiconducteurs III-N, incluant le GaN, l'AlN, l'InN et leurs alliages, font l'objet d'un
intérêt grandissant pour le développement de dispositifs optoélectroniques. Leur gap direct …