Protruding nanostructured surfaces for antimicrobial and osteogenic titanium implants
Protruding nanostructured surfaces have gained increasing interest due to their unique
wetting behaviours and more recently their antimicrobial and osteogenic properties. Rapid …
wetting behaviours and more recently their antimicrobial and osteogenic properties. Rapid …
Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Displacement Talbot lithography for nano-engineering of III-nitride materials
Nano-engineering III-nitride semiconductors offers a route to further control the
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
optoelectronic properties, enabling novel functionalities and applications. Although a variety …
Development of high uniformity Al1-xScxN piezoelectric film stack dry etching process on 8-inch silicon wafers
J Yan, Y Zhou, S Zhang - Vacuum, 2023 - Elsevier
This paper have investigated the basic properties of inductively coupled plasma reactive ion
etching (ICP-RIE) of scandium doped aluminum nitride (Al 1-x Sc x N) thin films on 8-inch …
etching (ICP-RIE) of scandium doped aluminum nitride (Al 1-x Sc x N) thin films on 8-inch …
Inductively coupled plasma reactive-ion etching of β-Ga2O3: Comprehensive investigation of plasma chemistry and temperature
AP Shah, A Bhattacharya - Journal of Vacuum Science & Technology …, 2017 - pubs.aip.org
The authors investigated the inductively coupled plasma reactive-ion etching (ICP-RIE) of β-
Ga 2 O 3 using different fluorine and chlorine-based plasmas. Sn-doped (-201) oriented β …
Ga 2 O 3 using different fluorine and chlorine-based plasmas. Sn-doped (-201) oriented β …
Researching the aluminum nitride etching process for application in MEMS resonators
J Yang, C Si, G Han, M Zhang, L Ma, Y Zhao, J Ning - Micromachines, 2015 - mdpi.com
We investigated the aluminum nitride etching process for MEMS resonators. The process is
based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask …
based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask …
High-Accuracy Prediction of ScAlN Thin Film Dry Etching Using Machine Learning Driven Regression Modeling
Scandium aluminum nitride (ScAlN) demonstrates notable properties such as high
electromechanical coupling, low dielectric permittivity, reduced acoustic losses, and so on …
electromechanical coupling, low dielectric permittivity, reduced acoustic losses, and so on …
ICP-RIE etching of polar, semi-polar and non-polar AlN: comparison of Cl2/Ar and Cl2/BCl3/Ar plasma chemistry and surface pretreatment
We report a comprehensive investigation of inductively-coupled plasma reactive ion etching
(ICP-RIE) of polar (0001) c-plane, semi-polar (11–22) and non-polar (11–20) a-plane AlN …
(ICP-RIE) of polar (0001) c-plane, semi-polar (11–22) and non-polar (11–20) a-plane AlN …
Temperature-dependence of Cl2/Ar ICP-RIE of polar, semipolar, and nonpolar GaN and AlN following BCl3/Ar breakthrough plasma
AP Shah, A Azizur Rahman… - Journal of Vacuum …, 2020 - pubs.aip.org
The authors report a comprehensive investigation of temperature-dependence of inductively
coupled plasma reactive ion etching (ICP-RIE) of polar (0001), semipolar (11− 22), and …
coupled plasma reactive ion etching (ICP-RIE) of polar (0001), semipolar (11− 22), and …
[图书][B] Encyclopedia of Plasma Technology-Two Volume Set
JL Shohet - 2016 - books.google.com
Technical plasmas have a wide range of industrial applications. The Encyclopedia of
Plasma Technology covers all aspects of plasma technology from the fundamentals to a …
Plasma Technology covers all aspects of plasma technology from the fundamentals to a …