Analysis of the THz responsivity of AlGaN/GaN HEMTs by means of Monte Carlo simulations
S García-Sánchez… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, by means of Monte Carlo (MC) simulations, the current responsivity of
AlGaN/GaN HEMTs operating as zero-bias detectors is analyzed, reaching the THz …
AlGaN/GaN HEMTs operating as zero-bias detectors is analyzed, reaching the THz …
A compact Non-Quasi-Static small-signal model for GaN HEMT
BJ Touchaei, M Shalchian - Microelectronics Journal, 2024 - Elsevier
In this work, we introduce a compact Non-Quasi-Static (NQS) model for the long-channel
Gallium nitride high-mobility field effect transistor based on charge-based EPFL (École …
Gallium nitride high-mobility field effect transistor based on charge-based EPFL (École …
Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs
G Paz-Martínez, I Íñiguez-De-La-Torre… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The responsivity of sub-THz zero-bias detectors based on GaN high-electron mobility
transistors (HEMTs) is measured up to 110 GHz. A predictive model based on static …
transistors (HEMTs) is measured up to 110 GHz. A predictive model based on static …
Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
P Artillan, I Íñiguez-de-la-Torre… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
A generic matrix model for the responsivity of millimeter-wave (mmW) and sub-THz square
law detectors is proposed. The model is valid for any number of ports and takes the biasing …
law detectors is proposed. The model is valid for any number of ports and takes the biasing …
High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
G Paz-Martínez, I Íñiguez-de-la-Torre… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The behavior of GaN-based high-electron-mobility transistors (HEMTs) as microwave zero-
bias detectors is very dependent on the configuration of the bias (current or voltage), the …
bias detectors is very dependent on the configuration of the bias (current or voltage), the …
Why FETs detect a THz signal at a frequency far beyond their amplifying capabilities
J Marczewski, M Zaborowski… - Opto-Electronics …, 2024 - yadda.icm.edu.pl
Field-effect transistors (FETs) are efficient detectors of THz radiation. Despite over three
decades of research, controversy still exists regarding the detection mechanism. The article …
decades of research, controversy still exists regarding the detection mechanism. The article …
Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models
I Íñiguez-De-La-Torre, G Paz-Martínez… - 2024 19th European …, 2024 - ieeexplore.ieee.org
The responsivity of microwave zero-bias detectors based on GaN high electron mobility
transistors (HEMTs) is measured up to 67 GHz and compared with Monte Carlo (MC) …
transistors (HEMTs) is measured up to 67 GHz and compared with Monte Carlo (MC) …
Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
I Íñiguez-de-la-Torre, P Artillan… - … and Millimetre-Wave …, 2023 - ieeexplore.ieee.org
The responsivity of microwave zero-bias detectors based on GaN high electron mobility
transistors (HEMTs) is measured up to 110 GHz. A compact model based on static …
transistors (HEMTs) is measured up to 110 GHz. A compact model based on static …
Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
G Paz-Martínez, S García-Sánchez… - National Symposium of …, 2024 - hal.science
The responsivity of zero-bias detectors based on high electron mobility transistors (HEMTs)
is studied using measurements up to 67 GHz and a complete small-signal equivalent circuit …
is studied using measurements up to 67 GHz and a complete small-signal equivalent circuit …