Reliability study of nano ribbon FET with temperature variation including interface trap charges
The nano ribbon FET (NR-FET) is an emerging device as multigate structure can be
designed on a single substrate, which leads to improvement in device performance …
designed on a single substrate, which leads to improvement in device performance …
Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node
J Yao, J Li, K Luo, J Yu, Q Zhang, Z Hou… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
We present a comprehensive theoretical investigation of the quantum confinement limited
mobility in the Si 1-x Ge x-channel gate-all-around nanosheet field effect transistor for 5-nm …
mobility in the Si 1-x Ge x-channel gate-all-around nanosheet field effect transistor for 5-nm …
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
High quality, thick (up to 1.1 μm), strain relaxed GeSn alloys were grown on Ge-buffered Si
(1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl 4 and low-cost …
(1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl 4 and low-cost …
GeSn quantum well p-channel tunneling FETs fabricated on Si (001) and (111) with improved subthreshold swing
Ultrathin GeSn channels were epitaxially grown on Si (111) and (001) substrates using solid
source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and …
source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Theoretical investigation of performance enhancement in GeSn/SiGeSn type-II staggered heterojunction tunneling FET
We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
Integrated 2D multi-fin field-effect transistors
M Yu, C Tan, Y Yin, J Tang, X Gao, H Liu… - Nature …, 2024 - nature.com
Vertical semiconducting fins integrated with high-κ oxide dielectrics have been at the centre
of the key device architecture that has promoted advanced transistor scaling during the last …
of the key device architecture that has promoted advanced transistor scaling during the last …
New materials for post-Si computing: Ge and GeSn devices
As Si-transistor technology advances beyond the 10 nm node, the device research
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
community is increasingly looking into the possibility of replacing Si with novel, high mobility …
Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries
GM Xia - Science Bulletin, 2019 - Elsevier
Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe: C
have been widely used and under extensive research for applications in major …
have been widely used and under extensive research for applications in major …
Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions
The presence of multiple interface of gate-oxide and semiconductor in Nano-ribbon FET (NR-
FET) causes several defects and leads to the degraded electrical parameters. In this regard …
FET) causes several defects and leads to the degraded electrical parameters. In this regard …