UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires
N Amador-Mendez, FM Kochetkov… - … Applied Materials & …, 2024 - ACS Publications
Nanostructured ultraviolet (UV) light sources represent a growing research field in view of
their potential applications in wearable optoelectronics or medical treatment devices. In this …
their potential applications in wearable optoelectronics or medical treatment devices. In this …
Low-Leakage Current Core–Shell AlGaN Nanorod LED Device Operating in the Ultraviolet-B Band
Despite the considerable potential of AlGaN-based ultraviolet-B light-emitting diodes (UV-B
LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical …
LEDs) in various applications such as phototherapy, UV curing, plant growth, and analytical …
Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices
L Valera, L Jaloustre, V Reita… - ACS Applied Nano …, 2024 - ACS Publications
The fabrication of organized AlN nanowires with well faceted m-sidewalls is demonstrated,
exhibiting a narrow near-band-edge emission that confirms the high quality of the AlN …
exhibiting a narrow near-band-edge emission that confirms the high quality of the AlN …
Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content
W Wei, Y Yang, Y Peng, M Maraj, W Sun - Molecules, 2024 - mdpi.com
AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially
for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order …
for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order …
-type ionization level lowering in ultrawide bandgap digital alloys
X Wang, J Zhu, W Shang, S Xu, L Fu, J Zhang, Y Hao - Physical Review B, 2024 - APS
Efficient p-type doping is essential and challenging for applications of ultra-wide-bandgap
AlGaN with a high aluminum content. Although the band-edge-assisted ionization enabled …
AlGaN with a high aluminum content. Although the band-edge-assisted ionization enabled …