Analysis of different annealing conditions on physical properties of Bi doped CdTe thin films for potential absorber layer in solar cells
The mainstream technology used for production of high-efficiency CdTe photovoltaics
involves Cu doping to CdTe absorber and CdTe/CdS junction activation by cadmium …
involves Cu doping to CdTe absorber and CdTe/CdS junction activation by cadmium …
Photoluminescence and photoconductivity in CdTe crystals doped with Bi
Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence,
photoinduced current transient spectroscopy, photoconductivity measurements, and optical …
photoinduced current transient spectroscopy, photoconductivity measurements, and optical …
碲镉汞材料非本征掺杂研究的发展
王忆锋， 刘黎明， 余连杰， 胡为民 - 红外, 2012 - journal.sitp.ac.cn
通过对近年来的部分英文文献进行归纳与分析, 介绍了碲镉汞(Hg1-xCdxTe, MCT)
非本征掺杂的研究进展. MCT 非本征掺杂是指杂质为Hg, Cd 或Te 以外的其他元素的情况 …
非本征掺杂的研究进展. MCT 非本征掺杂是指杂质为Hg, Cd 或Te 以外的其他元素的情况 …
Impact of Bi doping on CdTe thin films: thermal annealing evolution of physical properties for solar cell absorber layer applications
To mitigate probability of instability and device degradation associated with traditional Cu
doping and to tune required band gap as well as to reduce open circuit voltage loss to solar …
doping and to tune required band gap as well as to reduce open circuit voltage loss to solar …
CdTe: Bi films deposited by closed space vapor transport under variable pressure and doping levels: evidences of the possible formation of an intermediate band
In this work, the results about the properties of CdTe: Bi thin films grown by the Closed
Space Vapor Transport (CSVT) method are presented. Two procedures were developed for …
Space Vapor Transport (CSVT) method are presented. Two procedures were developed for …
Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport
O Vigil-Galán, E Sánchez-Meza, J Sastré-Hernández… - Thin solid films, 2008 - Elsevier
Bi doped cadmium telluride (CdTe: Bi) thin films were grown on glass-substrates by the
close space vapour transport method. CdTe: Bi crystals grown by the vertical Bridgman …
close space vapour transport method. CdTe: Bi crystals grown by the vertical Bridgman …
A study of the optical absorption in CdTe by photoacoustic spectroscopy
We show that the Photo-Acoustic Spectroscopy (PAS) is an useful alternative method for the
determination of the optical-absorption coefficient of CdTe thin films, in the spectral region …
determination of the optical-absorption coefficient of CdTe thin films, in the spectral region …
Photoluminescence of CdTe thin films doped with Yb
YP Gnatenko, PM Bukivskij, RV Gamernyk… - Journal of …, 2021 - Elsevier
In this paper, for the first time, we investigated the influence of ytterbium doping on the
radiative recombination processes in CdTe thin films deposited on a glass substrate by …
radiative recombination processes in CdTe thin films deposited on a glass substrate by …
Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties
O Vigil-Galán, E Sánchez-Meza, CM Ruiz… - Thin Solid Films, 2007 - Elsevier
The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed
Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are …
Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are …
Bismuth-induced deep levels and carrier compensation in CdTe
MH Du - Physical Review B—Condensed Matter and Materials …, 2008 - APS
First-principles calculations show that Bi on Cd site in CdTe can be either a donor Bi Cd+ or
an acceptor Bi Cd−, depending on the Fermi level. The Bi Cd− can bind a substitutional O (O …
an acceptor Bi Cd−, depending on the Fermi level. The Bi Cd− can bind a substitutional O (O …