[HTML][HTML] Machine learning, artificial intelligence, and chemistry: How smart algorithms are reshaping simulation and the laboratory
D Kuntz, AK Wilson - Pure and Applied Chemistry, 2022 - degruyter.com
Abstract Machine learning and artificial intelligence are increasingly gaining in prominence
through image analysis, language processing, and automation, to name a few applications …
through image analysis, language processing, and automation, to name a few applications …
Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng… - Crystal Growth & …, 2020 - ACS Publications
Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
Phase stability of ( polymorphs: A first-principles study
S Mu, CG Van de Walle - Physical Review Materials, 2022 - APS
Monoclinic Ga 2 O 3 and (Al x Ga 1− x) 2 O 3 alloys are wide-band-gap semiconductors with
promising applications in power electronics. Although the physical properties of monoclinic …
promising applications in power electronics. Although the physical properties of monoclinic …
Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films
In this work, the structural and electrical properties of metalorganic chemical vapor
deposited Si-doped β-(Al x Ga 1− x) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates …
deposited Si-doped β-(Al x Ga 1− x) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates …
Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium
AFMAU Bhuiyan, L Meng, HL Huang… - physica status solidi …, 2023 - Wiley Online Library
Growths of monoclinic (AlxGa1− x) 2O3 thin films up to 99% Al contents are demonstrated
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …
MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films
In this work, we systematically investigate the effects of growth parameters on the structural
and surface morphological properties of β-(Al x Ga1− x) 2O3 thin films grown on (010) β …
and surface morphological properties of β-(Al x Ga1− x) 2O3 thin films grown on (010) β …
[HTML][HTML] Metalorganic chemical vapor deposition of β-(AlxGa1− x) 2O3 thin films on (001) β-Ga2O3 substrates
Phase pure β-(AlxGa1− x) 2O3 thin films are grown on (001) oriented β-Ga2O3 substrates
via metalorganic chemical vapor deposition. By systematically tuning the precursor molar …
via metalorganic chemical vapor deposition. By systematically tuning the precursor molar …
Band offsets at metalorganic chemical vapor deposited β-(AlxGa1− x) 2O3/β-Ga2O3 interfaces—Crystalline orientation dependence
The β-(Al x Ga 1− x) 2 O 3 alloy represents an emerging ultrawide bandgap semiconductor
material for applications in high-power electronics and deep ultraviolet optoelectronics. The …
material for applications in high-power electronics and deep ultraviolet optoelectronics. The …
MOCVD growth and band offsets of κ-phase Ga2O3 on c-plane sapphire, GaN-and AlN-on-sapphire, and (100) YSZ substrates
Epitaxial growth of κ-phase Ga 2 O 3 thin films is investigated on c-plane sapphire, GaN-and
AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via …
AlN-on-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via …