[图书][B] Semiconductor material and device characterization

DK Schroder - 2015 - books.google.com
This Third Edition updates a landmark text with the latest findings The Third Edition of the
internationally lauded Semiconductor Material and Device Characterization brings the text …

[HTML][HTML] Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain

G Sahin - Results in physics, 2016 - Elsevier
The influence of the illumination wavelength on the electrical parameters of a vertical
parallel junction silicon solar cell by its rear side is theoretically analyzed. Based on the …

[HTML][HTML] Ac Recombination velocity in a lamella silicon Solar Cell

M Gueye, HL Diallo, AKM Moustapha, Y Traore… - World Journal of …, 2018 - scirp.org
The silicon solar cell with series-connected vertical junction is studied with different lamella
widths—the expression of the ac recombination velocity of the excess minority carrier at the …

[HTML][HTML] Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

O Diasse, A Diao, M Wade, MS Diouf, I Diatta… - Journal of Modern …, 2018 - scirp.org
In this paper, we extend the concept of back surface recombination through a study of a
silicon mono facial solar cell in static regime and under polychromatic illumination. Back …

[HTML][HTML] Surface Recombination concept as applied to determinate silicon solar cell base optimum thickness with doping level effect

MS Diop, HY Ba, N Thiam, I Diatta, Y Traore… - World Journal of …, 2019 - scirp.org
New expressions of back surface recombination of excess minority carriers in the base of
silicon solar are expressed dependent on both, the thickness and the diffusion coefficient …

[HTML][HTML] Lamella Silicon Solar Cell under Both Temperature and Magnetic Field: Width Optimum Determination

D Faye, S Gueye, M Ndiaye, ML Ba, I Diatta… - Journal of …, 2020 - scirp.org
This work deals with determining the optimum thickness of the lamella wafer of silicon solar
cell. The (p) base region makes up the bulk of the thickness of the wafer. This thickness has …

[HTML][HTML] Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

AM Ndiaye, S Gueye, MFM Fall, G Diop, AM Ba… - Journal of …, 2020 - scirp.org
The modelling and determination of the geometric parameters of a solar cell are important
data, which influence the evaluation of its performance under specific operating conditions …

AC Back Surface Recombination Velocity as Applied to Optimize the Base Thickness under Temperature of an (n+-p-p+) Bifacial Silicon Solar Cell, Back Illuminated …

K Loum, O Sow, G Diop, R Mane, I Diatta… - World Journal of …, 2023 - scirp.org
The bifacial silicon solar cell, placed at temperature (T) and illuminated from the back side
by monochromatic light in frequency modulation (ω), is studied from the frequency dynamic …

[HTML][HTML] n+-p-p+ Silicon Solar Cell Base Optimum Thickness Determination under Magnetic Field

C Thiaw, ML Ba, MA Ba, G Diop, I Diatta… - Journal of …, 2020 - scirp.org
Base optimum thickness is determined for a front illuminated bifacial silicon solar cell n+-p-
p+ under magnetic field. From the magneto transport equation relative to excess minority …

Determination of polysilicon solar cell parameters using electrical short-circuit current Decay method

B Ba, M Kane - Solid-State Electronics, 1998 - Elsevier
The electrical short-circuit current decay (ESCCD) method is enlarged to a polycrystalline
silicon solar cell with grains fibrously oriented. The current decay through the n–p junction of …