Advances in modeling and reduction of conducted and radiated EMI in non-isolated power converters

J Yao, Y Lai, Z Ma, S Wang - 2021 IEEE Applied Power …, 2021 - ieeexplore.ieee.org
Electromagnetic interference (EMI) in non-isolated power converters is regulated by
extensive standards in many applications. EMI modeling and reduction research is key to …

Reduction of CM noise by minimizing near-field effects in a DC/DC converter

T McGrew, S Wang, Q Li - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
Enabled by the adoption of wide-bandgap power devices, converters in many applications
continue to push switching frequency and power density. These trends have the …

Design and optimization of gate driver integrated multichip 3-D GaN power module

AI Emon, H Carlton, J Harris, A Krone… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are excellent power
semiconductor devices due to their superior material properties compared to their silicon (Si) …

Noise immune cascaded gate driver solution for driving high speed GaN power devices

AB Mirza, AI Emon, SS Vala… - 2021 IEEE Energy …, 2021 - ieeexplore.ieee.org
GaN HEMTs permit fast switching, leading to high dV/dt being generated across them. The
Common Mode (CM) noise associated with the dV/dt propagates through the gate drivers' …

Design and optimization of 650V/60A double-sided cooled multichip GaN module

AI Emon, H Carlton, J Harris, A Krone… - 2021 IEEE Applied …, 2021 - ieeexplore.ieee.org
Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-
performance power electronics energy conversion due to their superior material properties …

A 650V/60A gate driver integrated wire-bondless multichip GaN module

AI Emon, H Carlton, J Harris, A Krone… - 2021 IEEE 12th …, 2021 - ieeexplore.ieee.org
Lateral Gallium Nitride (GaN) high electron mobility transistors (HEMT) exhibit lower on
resistance and high switching speed due to the presence of 2D electron Gas and smaller …

Precision Temperature Control System with Low EMI for Applications in Analyzing Thermal Properties of Highly Sensitive Piezoelectric Sensors

S Nowocień, RS Wielgus, J Mroczka - Sensors, 2022 - mdpi.com
A low electromagnetic interference (EMI), precision temperature control system for sensitive
piezoelectric sensors stabilization and their thermal characteristics research was proposed …

EMI propagation path modeling of 3-level t-type NPC power module with stacked DBC enabled EMI shielding

AI Emon, MU Hassan, AB Mirza… - 2021 IEEE Energy …, 2021 - ieeexplore.ieee.org
3-level T-type neutral point clamped (NPC) topology is more popular than its 2-level
counterparts in energy conversion systems due to their higher efficiency, lower harmonics …

An integrated magnetic structure for bi-directional two-channel interleaved boost converter with coupled inductor

AB Mirza, AI Emon, SS Vala… - 2021 IEEE Energy …, 2021 - ieeexplore.ieee.org
The channel current in an interleaved boost converter consists of circulating Differential
Mode (DM) current and Common Mode (CM) boost current. Inverse-coupling between …

Design of partial-discharge-free busbar for more-electric aircraft application with low pressure condition

Z Yuan, Y Wang, Z Wang, AI Emon… - 2021 IEEE Applied …, 2021 - ieeexplore.ieee.org
This paper proposes an insulation design and optimization methodology for laminated
busbars in more-electric aircraft (MEA) motor drive system. The design assumes that the …