Ferromagnetism of ZnO and GaN: a review

C Liu, F Yun, H Morkoc - Journal of Materials Science: Materials in …, 2005 - Springer
The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Spin-polarized light-emitting diodes and lasers

M Holub, P Bhattacharya - Journal of Physics D: Applied Physics, 2007 - iopscience.iop.org
Spin-polarized light sources are a new class of devices in which the radiative recombination
of spin-polarized carriers results in luminescence exhibiting a net circular polarization. The …

[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth

H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

ZnO doped with transition metal ions

SJ Pearton, DP Norton, MP Ivill… - … on electron devices, 2007 - ieeexplore.ieee.org
Spin-dependent phenomena in ZnO may lead to devices with new or enhanced
functionality, such as polarized solid-state light sources and sensitive biological and …

Self-polarized spin-nanolasers

JY Chen, TM Wong, CW Chang, CY Dong… - Nature …, 2014 - nature.com
Besides adding a new functionality to conventional lasers, spin-polarized lasers can,
potentially, offer lower threshold currents and reach higher emission intensities. However, to …

Ferromagnetism in transition-metal doped ZnO

SJ Pearton, DP Norton, MP Ivill, AF Hebard… - Journal of Electronic …, 2007 - Springer
ZnO is an attractive candidate for spintronics studies because of its potential for exhibiting
high Curie temperatures and the relative lack of ferromagnetic second phases in the …

The origin of ferromagnetism in 57Fe ion-implanted semiconducting 6H-polytype silicon carbide

F Stromberg, W Keune, X Chen… - Journal of Physics …, 2006 - iopscience.iop.org
Semiconducting (mostly p-doped) single crystals of the 6H-polytype of α-SiC (0001) were
implanted with 57 Fe ions with a nominal dose of 1.0× 10 16, 2.0× 10 16, 3.0× 10 16 or 2.0× …

Spintronics device concepts

SJ Pearton, DP Norton, R Frazier, SY Han… - IEE Proceedings-Circuits …, 2005 - IET
Spin-dependent phenomena in semiconductors may lead to devices with new or enhanced
functionality, such as polarised solid-state light sources (spin light-emitting diodes), novel …

Piezo-phototronic spin laser based on wurtzite quantum wells

C Xie, M Dan, G Hu, N Liu, Y Zhang - Nano Energy, 2022 - Elsevier
Piezo-phototronic spin lasers are studied based on wurtzite quantum wells. The strain-
induced polarization changes the gain spectrum and gain asymmetry at room temperature …

Properties of highly Cr-doped AlN

AY Polyakov, NB Smirnov, AV Govorkov… - Applied physics …, 2004 - pubs.aip.org
Cr concentrations of∼ 2 at.% were incorporated into AlN during growth by molecular beam
epitaxy. Under optimized conditions, single-phase, insulating AlCrN is produced whose …