The high numerical aperture (NA) extreme ultra-violet (EUV) requires a thin layer of
photoresist stack, facing great challenges of pattern collapse during photolithography …

In this paper, we aimed to develop ultrathin films of hyperbranched polybenzoxazole with a
thickness in the range between 1 and 100 nm. They are expected to have great potential for …

This study delves into the effects of wafer backside particles on pattern defocus in EUV
lithography (EUVL). Additionally, the potential mitigation of this pattern defocus was …

Research and development of EUV photoresists capable of supporting future requirements
such as high-NA EUV continues. It is foreseen that, to contend with much higher photon-shot …

In EUV lithography, good resist patterning requires an assist layer beneath it to provide
adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In …

In EUV lithography, the underlayers (ULs) play a crucial role for EUV exposure dose
reduction as well as the prevention of the pattern collapse of the resist. In this work, we have …

The next generation of this technology (using a high-numerical aperture (NA) at 0.55
compared to the present at 0.33) is also currently being prepared and is scheduled to be …

Irresistible Materials is developing a novel photoresist for EUV lithography including high-
NA patterning. A major concern for the key research area of high-NA EUV resists is that …

Irresistible Materials (IM) is developing a photoresist based on the multi-trigger concept,
which is designed to suppress roughness using a new photoresist mechanism incorporating …