HK Cheemalamarri, B Varghese… - 2023 IEEE 73rd …, 2023 - ieeexplore.ieee.org
The metal-metal bonding has become more promising for fine-line hermitic sealing and electronic packaging applications. Even though aluminum has CMOS compatibility and …
Heterogeneous integration of micro-electro mechanical systems (MEMS) and complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) by 3D stacking …
Aluminum has a great potential as a wafer bonding material due to its inherent compatibility with the complimentary metal oxide semiconductor (CMOS) processes. In this study, a novel …
S Schulze, M Wietstruck, T Voß, P Krüger - ECS Transactions, 2023 - iopscience.iop.org
This paper presents a surface-activated Al-Al wafer bonding process for patterned 200 mm wafers that removes the native oxide in an argon plasma and enables high bond quality with …
S Schulze, T Voß, P Krüger… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This work presents a collective die to wafer (D2W) bonding concept based on surface- activated aluminum–aluminum (Al–Al) thermocompression bonding, which involves the …
S Braun, I Cirulis, K Vogel, C Hofmann… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
Wafer bonding is crucial in semiconductor manufacturing, integrating diverse materials and creating complex devices. Aluminum thermo-compression bonding (Al TCB) is promising for …
Heterogeneous integration of micro-electro mechanical systems (MEMS) and complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) by 3D stacking …