Z Li, Y Tian, C Teng, H Cao - Materials, 2020 - mdpi.com
The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both …
Y Shacham-Diamand, T Osaka, Y Okinaka… - Microelectronic …, 2015 - Elsevier
Electroless deposition (ELD) is a well-known method for preparing thin films of metals and their alloys. It is a highly selective method allowing additive patterning of isolated and …
Advancement of semiconductor devices requires the realization of an ultrathin diffusion barrier layer between Cu interconnect and insulating layers. The present work investigated …
The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper metallization has been investigated. The AlMoNbSiTaTiVZr and copper layers are deposited …
In this study, the inhibition effect of 3-amino-1, 2, 4-triazole (ATA) on copper corrosion in 2M HNO 3 solution was studied. Electrochemical techniques such as potentiodynamic …
LH Madkour, IH Elshamy - International Journal of Industrial Chemistry, 2016 - Springer
The inhibitive performance of seven synthesized 2-(2-benzimidazolyl)-4 (phenylazo) phenol (BPP_ 1–7) derivatives was investigated experimentally on the corrosion of copper in 2.0 M …
Self-assembled molecular nanolayers (MNLs) composed of short organic chains and terminated with desired functional groups are attractive for modifying surface properties for a …
The fabrication of electrical interconnects to provide power for and communication with computers as their component complementary metal oxide semiconductor (CMOS) devices …