Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric
layer at high temperatures; therefore, it must have a high stability and good adhesion to both …

Electroless deposition (ELD) is a well-known method for preparing thin films of metals and
their alloys. It is a highly selective method allowing additive patterning of isolated and …

Advancement of semiconductor devices requires the realization of an ultrathin diffusion
barrier layer between Cu interconnect and insulating layers. The present work investigated …

The application of an AlMoNbSiTaTiVZr high-entropy alloy film as diffusion barrier for copper
metallization has been investigated. The AlMoNbSiTaTiVZr and copper layers are deposited …

Ketene dithioacetal derivatives, namely 3-[bis (methylthio) methylene] pentane-2, 4-dione
(1), 3-(1, 3-dithian-2-ylidene) pentane-2, 4-dione (2) and 3-(1, 3-dithiolan-2-ylidene) …

In this study, the inhibition effect of 3-amino-1, 2, 4-triazole (ATA) on copper corrosion in 2M
HNO 3 solution was studied. Electrochemical techniques such as potentiodynamic …

The inhibitive performance of seven synthesized 2-(2-benzimidazolyl)-4 (phenylazo) phenol
(BPP_ 1–7) derivatives was investigated experimentally on the corrosion of copper in 2.0 M …

Self-assembled molecular nanolayers (MNLs) composed of short organic chains and
terminated with desired functional groups are attractive for modifying surface properties for a …

The fabrication of electrical interconnects to provide power for and communication with
computers as their component complementary metal oxide semiconductor (CMOS) devices …