The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …

Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …

Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …

Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …

Integrated circuits based on two-dimensional semiconductors require ultrathin gate
insulators that can provide high interface quality and dielectric reliability, minimized …

For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D)
materials are a potential replacement for silicon since even atomically thin 2D …

Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …

We present a straightforward metamaterial structure based on a graphene monolayer, which
comprises a single graphene block and two graphene strips. This innovative design enables …

During the last few decades, the microelectronics industry has actively been investigating
the potential for the functional integration of semiconductor-based devices beyond digital …

The 2-D semiconductors have been recognized as promising channel materials for the
ultimately scaled transistor technologies beyond silicon. An essential technology enabler for …