The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …

Ferroelectric materials are considered ideal for emerging memory devices owing to their
characteristic remanent polarization, which can be switched by applying a sufficient electric …

Hafnia thin films are known to demonstrate excellent performance with strong ferroelectricity
and high scalability, making them promising candidates for CMOS-compatible materials …

We have previously studied fatigue and its recovery phenomenon on 64 kbits hafnium-
based one-transistor and one-capacitor (1T1C) ferroelectric random-access memory …

In-memory computing is an attractive solution for reducing power consumption and memory
access latency cost by performing certain computations directly in memory without reading …

Ferroelectricity in doped HfO 2 thin films was reported for the first time 12 years ago,
generating strong interest in the non-volatile memory and logic community. Thanks to their …

NVDRAM is a 32Gb, dual layer 3D stacked, non-volatile (Hf, Zr) O 2-based 1T1C (1
Transistor 1 Capacitor) ferroelectric memory technology. With high capacity, low cost and …

Ferroelectric HfO 2-based thin films have attracted increasing interest due to their potential
applications in nonvolatile memory areas. However, their unique properties, such as imprint …

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated
circuit performance, offering advantages such as miniaturization, compatibility with CMOS …

In situ laser-based photoemission electron microscopy observations with time-dependent
dielectric breakdown measurements of TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN ferroelectric …