Radiation damage in wide and ultra-wide bandgap semiconductors
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …
devices that are used in the automotive, wireless, and industrial power markets, but their …
Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs
CA Grome, W Ji - Electronics, 2024 - mdpi.com
Radiation hardening of power MOSFETs (metal oxide semiconductor field effect transistors)
is of the highest priority for sustaining high-power systems in the space radiation …
is of the highest priority for sustaining high-power systems in the space radiation …
Ion-induced energy pulse mechanism for single-event burnout in high-voltage SiC power MOSFETs and junction barrier Schottky diodes
DR Ball, KF Galloway, RA Johnson… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout
(SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly …
(SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly …
Effects of breakdown voltage on single-event burnout tolerance of high-voltage SiC power MOSFETs
DR Ball, KF Galloway, RA Johnson… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Ion-and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker,
more lightly doped epitaxial (epi) region significantly increases the threshold at which ion …
more lightly doped epitaxial (epi) region significantly increases the threshold at which ion …
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
We present a review of the published experimental and simulation radiation damage results
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
in Ga 2 O 3. All of the polytypes of Ga 2 O 3 are expected to show similar radiation …
Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs
J Lu, J Liu, X Tian, H Chen, Y Tang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, the single-event response of the 1.2-kV silicon-carbide (SiC) power MOSFETs
with varied buffer layer designs is investigated by the 2-D numerical simulations. The …
with varied buffer layer designs is investigated by the 2-D numerical simulations. The …
Gate damages induced in SiC power MOSFETs during heavy-ion irradiation—Part I
C Abbate, G Busatto, D Tedesco… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Experimental characterization of the damage induced to SiC power MOSFETs by heavy-ion
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …
irradiation is presented as a premise to a finite element simulation study aimed at gaining an …
Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation
Deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy
(MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) …
(MCTS) are used to investigate electrically active defects in commercial silicon carbide (SiC) …
Impact of heavy-ion range on single-event effects in silicon carbide power junction barrier Schottky diodes
Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS)
diodes are presented. Measured data indicate that heavy ions having range less than the …
diodes are presented. Measured data indicate that heavy ions having range less than the …