We fabricated strongly confined Schottky-gated quantum point contacts by etching Si∕ Si
Ge heterostructures and observed intriguing conductance quantization in units of …

The conductance of strongly confined one-dimensional constrictions fabricated from Si/SiGe
two-dimensional electron gases is investigated. Conductance measurements reveal …

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si∕
SiGe cavities is investigated. We fabricated strained Si∕ SiGe cavities by confining a high …

The temperature dependence of the mobility of the two-dimensional electron gas (2DEG) in
a silicon quantum well strained by Si 0. 7 Ge 0. 3 relaxed buffer layer is determined precisely …

An X-ray scanning microscope study of self-organized morphological defects arising during
the growth of thick SiGe virtual substrates grown on Si (001) surface is reported. The 200nm …

Silicon quantum devices have progressed rapidly over the past decade, driven by recent
interest in spintronics and quantum computing. Spin coherence has emerged as a leading …

We report on the realization of high-mobility two-dimensional electron gas based on
modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) …

The Hall factor in an n-type Si/SiGe two-dimensional structure is calculated for several
growth directions and under different strain conditions. Contrary to the Hall factor for a …

In recent years the study of electronic properties of low dimensional mesoscopic systems
has attracted considerable interest. One of the reasons for this is the opportunity it gives of …

We report on the growth and characterization of high‐mobility 2DEGs on tensile strained Si
grown on cubic SiGe alloy on SOI substrates. The electrical properties were investigated in …