The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Stimuli‐responsive memristive materials for artificial synapses and neuromorphic computing

H Bian, YY Goh, Y Liu, H Ling, L Xie… - Advanced Materials, 2021 - Wiley Online Library
Neuromorphic computing holds promise for building next‐generation intelligent systems in a
more energy‐efficient way than the conventional von Neumann computing architecture …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Nonvolatile multistates memories for high-density data storage

Q Cao, W Lü, XR Wang, X Guan, L Wang… - … Applied Materials & …, 2020 - ACS Publications
In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology

H Sun, Q Liu, C Li, S Long, H Lv, C Bi… - Advanced Functional …, 2014 - Wiley Online Library
Volatile threshold switching (TS) and non‐volatile memory switching (MS) are two typical
resistive switching (RS) phenomena in oxides, which could form the basis for memory …

Dry reforming of methane on single-site Ni/MgO catalysts: importance of site confinement

Z Zuo, S Liu, Z Wang, C Liu, W Huang, J Huang… - ACS …, 2018 - ACS Publications
Single-site catalysts (SSCs) have drawn considerable attention, because of their superior
behaviors in catalysis. However, the origin of promoting the effect of a single site is not well …

Lead-free monocrystalline perovskite resistive switching device for temporal information processing

JY Mao, Z Zheng, ZY Xiong, P Huang, GL Ding… - Nano Energy, 2020 - Elsevier
Lead-free halide perovskites are emerging as promising candidate for practical application
of optoelectronic devices due to their nontoxicity. Unfortunately, previously-reported lead …

Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials

Y Li, S Long, Q Liu, H Lv, M Liu - Small, 2017 - Wiley Online Library
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

LixNiO/Ni Heterostructure with Strong Basic Lattice Oxygen Enables Electrocatalytic Hydrogen Evolution with Pt-like Activity

K Lu, Y Liu, F Lin, IA Cordova, S Gao, B Li… - Journal of the …, 2020 - ACS Publications
The low-cost hydrogen production from water electrolysis is crucial to the deployment of
sustainable hydrogen economy but is currently constrained by the lack of active and robust …