Al- and Ga-Doped TiO2, ZrO2, and HfO2: The Nature of O 2p Trapped Holes from a Combined Electron Paramagnetic Resonance (EPR) and Density Functional …
The nature of hole centers in a series of MeO2 (TiO2, ZrO2, HfO2) metal oxides doped with
trivalent Al or Ga ions has been investigated coupling the classic continuous wave electron …
trivalent Al or Ga ions has been investigated coupling the classic continuous wave electron …
Effect of Annealing Temperature on the Structural, Optical, and Electrical Properties of Al-Doped ZrO2 Gate Dielectric Films Treated by the Sol–Gel Method
H Cai, K Tuokedaerhan, Z Lu, R Zhang, H Du - Coatings, 2022 - mdpi.com
In this article, we report the preparation of Al-doped ZrO2 (AZO) thin films by the sol–gel
method. The electrical properties, microstructure, and optical properties of AZO high-k gate …
method. The electrical properties, microstructure, and optical properties of AZO high-k gate …
Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode
JH Ahn, SH Kwon - ACS Applied Materials & Interfaces, 2015 - ACS Publications
The dielectric properties of the Si-doped Zr1–x Hf x O2 thin films were investigated over a
broad compositional range with the goal of improving their properties for use as DRAM …
broad compositional range with the goal of improving their properties for use as DRAM …
Role of oxygen vacancies on the structure and density of states of iron-doped zirconia
In this paper, we study the effect of iron doping in zirconia using both theoretical and
experimental approaches. Combining density functional theory (DFT) simulations with the …
experimental approaches. Combining density functional theory (DFT) simulations with the …
Growth and electrical properties of spin coated ultrathin ZrO2 films on silicon
Ultrathin (< 50 nm) zirconium oxide (ZrO 2) films are being intensively studied as high-k
dielectrics for future metal-oxide-semiconductor (MOS) technology. In this paper, ultrathin …
dielectrics for future metal-oxide-semiconductor (MOS) technology. In this paper, ultrathin …
High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped Gate Dielectric
Y Gao, X Li, L Chen, J Shi, XW Sun… - IEEE electron device …, 2014 - ieeexplore.ieee.org
In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film
transistors (TFTs) with an Al-doped ZrO 2 (AZO) gate dielectric. The AZO thin films were …
transistors (TFTs) with an Al-doped ZrO 2 (AZO) gate dielectric. The AZO thin films were …
Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition
In this work we investigated the effect of Fe doping on structural properties of ZrO2 grown by
atomic layer deposition (ALD) using Zr (TMHD) 4 for Zr and Fe (TMHD) 3 for Fe precursors …
atomic layer deposition (ALD) using Zr (TMHD) 4 for Zr and Fe (TMHD) 3 for Fe precursors …
Thermal conductivity of plasma-enhanced atomic layer deposited hafnium zirconium oxide dielectric thin films
Hafnium zirconium oxide (HZO) is promising for applications in future memory devices and
energy storage and harvesting. While many studies have focused upon the dielectric and …
energy storage and harvesting. While many studies have focused upon the dielectric and …
E-beam deposition of scandia-stabilized zirconia (ScSZ) thin films co-doped with Al
N Kainbayev, M Sriubas, K Bockute, D Virbukas… - Coatings, 2020 - mdpi.com
Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam
evaporation, and the effects of deposition parameters on the structure and chemical …
evaporation, and the effects of deposition parameters on the structure and chemical …
Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory
A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory
capacitor including SiO2 as tunnel oxide, Al–HfO2 as charge trapping layer, SiO2 as …
capacitor including SiO2 as tunnel oxide, Al–HfO2 as charge trapping layer, SiO2 as …