In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …

This paper proposes the structure of a vertical PNPN single gated feedback field-effect
transistor (vertical FBFET) and investigates its performance using a TCAD simulator. The …

Feedback field-effect transistor (FBFET), an alternative switching device, has received
attention due to its ideal steep switching feature. By utilizing the positive feedback …

In this paper, a p-type inverted-T FinFET (IT FinFET) has been optimally structured. Focus is
made on analyzing the inferior characteristics reported from the previously fabricated IT …

Feedback field-effect transistors (FBFETs) are devices based on a positive feedback loop in
which the electrons and holes in the channel region act on the energy states of the potential …

We have developed a capacitor-less I&F neuron circuit with a dual gate positive feedback
fieldeffect transistor (FBFET) and successfully co-integrated FBFET and CMOS in a wafer. By …

The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (I
on) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to …

Featured Application This work can be applied to analyze and reduce the WFV effect of
TFETs. Abstract Metal gate technology is one of the most important methods used to …

The most important aspect of an artificial neuron circuit is energy consumption. An analog
neuron circuit has a critical problem in that the energy consumption in the steady-state due …

The design and performance analysis of a Si-SiGe heterostructure-based double gate
feedback field-effect transistor (HDG FBFET) are presented in this paper. The proposed …