Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
I De Wolf - Semiconductor science and technology, 1996 - iopscience.iop.org
Local mechanical stress is currently an important topic of concern in microelectronics
processing. A technique that has become increasingly popular for local mechanical stress …
processing. A technique that has become increasingly popular for local mechanical stress …
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
R Beanland, DJ Dunstan, PJ Goodhew - Advances in Physics, 1996 - Taylor & Francis
We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …
semiconductor heterostructures. By using simple concepts derived from the Matthews model …
Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy
Test structures consisting of shallow trench isolation (STI) structures are fabricated using
advanced silicon (Si) technology. Different process parameters and geometrical features are …
advanced silicon (Si) technology. Different process parameters and geometrical features are …
Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
WS Kwon, DT Alastair, KH Teo, S Gao, T Ueda… - Applied Physics …, 2011 - pubs.aip.org
Three-dimensional stress development was observed in silicon surrounding the Cu-filled
through-silicon via (TSV) structures undergoing the thermal annealing process. We show …
through-silicon via (TSV) structures undergoing the thermal annealing process. We show …
Silicide-induced stress in Si: Origin and consequences for MOS technologies
A Steegen, K Maex - Materials Science and Engineering: R: Reports, 2002 - Elsevier
Metal/silicides have been introduced in CMOS technology, some years ago, the main goal
being to reduce the sheet resistance of highly doped regions. Research and development …
being to reduce the sheet resistance of highly doped regions. Research and development …
Calculation of strain distributions in multiple‐quantum‐well strained‐layer structures
J Downes, DA Faux - Journal of applied physics, 1995 - pubs.aip.org
We present a simple method for calculating strain distributions in structures containing an
arbitrary number and combination of strained layers of finite length buried in an infinite …
arbitrary number and combination of strained layers of finite length buried in an infinite …
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction
The relaxation which occurs along the thinning direction of transmission electron microscopy
(TEM) cross-sections of heterostructures is still poorly known. This has so far prevented the …
(TEM) cross-sections of heterostructures is still poorly known. This has so far prevented the …
Electron microscopy characterization of monoclinic SiAs precipitates in heavily As+-implanted silicon
A Armigliato, A Parisini - Journal of materials research, 1991 - cambridge.org
Silicon wafers have been implanted with As+ ions at an energy of 100 keV and a dose of 1×
1017 cm− 2 and subsequently annealed at 1050° for 15 min. This results in a peak As …
1017 cm− 2 and subsequently annealed at 1050° for 15 min. This results in a peak As …
Influence of strain relaxation on the electronic properties of buried quantum wells and wires
JR Downes, DA Faux, EP O'Reilly - Materials Science and Engineering: B, 1995 - Elsevier
Most analyses of strained quantum-well structures assume the quantum well to be effectively
of infinite extent within the growth plane. There are, however, several situations where one …
of infinite extent within the growth plane. There are, however, several situations where one …
In-situ Crack Tip Stress Measurement at High Temperature in IN-617 Using Combined Nano-Indentation and Nano-Mechanical Raman Spectroscopy
In this work, the in-situ measurement of crack tip stresses in Inconel 617 at high temperature
is presented. The temperature during loading in the current work was varied in the range …
is presented. The temperature during loading in the current work was varied in the range …