Systems and methods utilizing parallel configurations of magnetic memory devices
KD Bozdag, M Gajek, M El Baraji, EM Ryan - US Patent 10,347,308, 2019 - Google Patents
A magnetic storage device is provided. The magnetic storage device comprises a magnetic
memory cell, which includes two or more magnetic tunnel junctions (MTJs), including a first …
memory cell, which includes two or more magnetic tunnel junctions (MTJs), including a first …
Systems and methods utilizing serial configurations of magnetic memory devices
KD Bozdag, M Gajek, M El Baraji, EM Ryan - US Patent 10,403,343, 2019 - Google Patents
A memory cell apparatus is provided. The apparatus comprises two or more magnetic tunnel
junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first …
junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first …
Nonvolatile semiconductor memory device
T Ino - US Patent 8,866,139, 2014 - Google Patents
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor
layer; a first insulating film formed on the semiconductor layer; a charge storage film that is …
layer; a first insulating film formed on the semiconductor layer; a charge storage film that is …
Nanoscale floating gate and methods of formation
GS Sandhu, DVN Ramaswamy - US Patent 7,667,260, 2010 - Google Patents
BACKGROUND Memory devices are typically provided as internal storage areas in a
computer. The term memory identifies data storage that comes in the form of integrated …
computer. The term memory identifies data storage that comes in the form of integrated …
Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
M Gajek, M Tzoufras - US Patent 10,693,056, 2020 - Google Patents
A magnetic memory device is provided. The magnetic memory device includes:(i) a
cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) a first …
cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) a first …
Anchoring carbon nanotube columns
T Fang, M Harburn, O Yaglioglu - US Patent 8,272,124, 2012 - Google Patents
US8272124B2 - Anchoring carbon nanotube columns - Google Patents US8272124B2 -
Anchoring carbon nanotube columns - Google Patents Anchoring carbon nanotube …
Anchoring carbon nanotube columns - Google Patents Anchoring carbon nanotube …
Methods of fabricating dual threshold voltage devices
G Sharma, A Levi, KH Kim - US Patent 10,192,789, 2019 - Google Patents
ABSTRACT A device having two transistors with dual thresholds, and a method of
fabricating the device, including fabricating a silicide source, a conductive layer, and …
fabricating the device, including fabricating a silicide source, a conductive layer, and …
Floating gate device with graphite floating gate
R Kakoschke, H Seidl - US Patent 7,978,504, 2011 - Google Patents
One or more embodiments relate to a memory device, comprising: a substrate; a charge
storage layer disposed over the substrate; and a control gate disposed over the charge …
storage layer disposed over the substrate; and a control gate disposed over the charge …
Three-dimensional magnetic memory devices
M Gajek, M Tzoufras, D Guarisco, EM Ryan - US Patent 10,541,268, 2020 - Google Patents
(57) ABSTRACT A magnetic memory device is provided. The magnetic memory device
includes:(i) a cylindrical core,(ii) a first cylindrical ferromagnetic layer that surrounds the …
includes:(i) a cylindrical core,(ii) a first cylindrical ferromagnetic layer that surrounds the …
Methods and systems for writing to magnetic memory devices utilizing alternating current
KD Bozdag, M Gajek, M Tzoufras, EM Ryan - US Patent 10,803,916, 2020 - Google Patents
A method for selectively writing to STT-MRAM using an AC current is provided. The method
is performed in a memory device including two or more multilevel magnetic tunnel junctions …
is performed in a memory device including two or more multilevel magnetic tunnel junctions …