I Goldfarb, Y Camus, M Dascalu, F Cesura… - Physical Review B, 2017 - APS
We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition …
JK Tripathi, R Levy, Y Camus, M Dascalu… - Applied Surface …, 2017 - Elsevier
Self-organized transition-metal (Ni and Fe) and rare-earth (Er) silicide nanostructures were grown on Si (1 1 1) and Si (0 0 1) surfaces under low coverage conditions, in a “solid phase” …
I Goldfarb, G Cohen-Taguri, S Grossman… - Physical Review B …, 2005 - APS
The aim of this work was to find the equilibrium shape of titanium silicide nanocrystals, epitaxially grown on Si (111) in ultrahigh vacuum. To attain the state of equilibrium, the so …
F Zhao, X Cui, B Wang, JG Hou - Applied Surface Science, 2006 - Elsevier
We present the preparation of C54 TiSi2 nanoislands on Si (111) with a method of the pulsed laser deposition of titanium oxide thin films. The TiO2 thin films with nominal …
We report on self-organized solid-phase epitaxially grown Ti-and Co-silicide nanoislands ordered along step-bunch edges of a vicinal Si (111) surface, as a function of the initial …
I Goldfarb, S Grossman, G Cohen-Taguri - Applied surface science, 2006 - Elsevier
Titanium silicide grows on silicon in a form of discontinuous layers, which is the most serious obstacle to the formation of high-quality epilayers for VLSI applications. At the same time …
JL Tedesco, JE Rowe, RJ Nemanich - Journal of Applied Physics, 2010 - pubs.aip.org
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si (100) substrates followed by annealing to∼ 800 …
I Goldfarb, E Roizin, S Manor, M Levinshtein - Materials science in …, 2009 - Elsevier
The aim of this work was to explore self-organizational tendencies of transition-metal silicide nanoislands formed by heteroepitaxial self-assembled processes, such as CoxSiy/Si …
Extending electronic devices beyond the limitations of current micro-electronics manufacturing will require detailed knowledge of how to make contacts to semiconductor …