A review of wetting versus adsorption, complexions, and related phenomena: the rosetta stone of wetting

WD Kaplan, D Chatain, P Wynblatt… - Journal of Materials …, 2013 - Springer
This paper reviews the fundamental concepts and the terminology of wetting. In particular, it
focuses on high temperature wetting phenomena of primary interest to materials scientists …

Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth

I Goldfarb, Y Camus, M Dascalu, F Cesura… - Physical Review B, 2017 - APS
We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide
nanostructures on their geometry. By varying substrate orientation and deposition …

Self-organized growth and magnetic properties of epitaxial silicide nanoislands

JK Tripathi, R Levy, Y Camus, M Dascalu… - Applied Surface …, 2017 - Elsevier
Self-organized transition-metal (Ni and Fe) and rare-earth (Er) silicide nanostructures were
grown on Si (1 1 1) and Si (0 0 1) surfaces under low coverage conditions, in a “solid phase” …

Equilibrium shape of titanium silicide nanocrystals on Si (111)

I Goldfarb, G Cohen-Taguri, S Grossman… - Physical Review B …, 2005 - APS
The aim of this work was to find the equilibrium shape of titanium silicide nanocrystals,
epitaxially grown on Si (111) in ultrahigh vacuum. To attain the state of equilibrium, the so …

Preparation and characterization of C54 TiSi2 nanoislands on Si (1 1 1) by laser deposition of TiO2

F Zhao, X Cui, B Wang, JG Hou - Applied Surface Science, 2006 - Elsevier
We present the preparation of C54 TiSi2 nanoislands on Si (111) with a method of the
pulsed laser deposition of titanium oxide thin films. The TiO2 thin films with nominal …

Coverage-dependent self-organized ordering of Co-and Ti-silicide nanoislands along step-bunch edges of vicinal Si (111)

JK Tripathi, M Garbrecht, CG Sztrum-Vartash… - Physical Review B …, 2011 - APS
We report on self-organized solid-phase epitaxially grown Ti-and Co-silicide nanoislands
ordered along step-bunch edges of a vicinal Si (111) surface, as a function of the initial …

Evolution of epitaxial titanium silicide nanocrystals as a function of growth method and annealing treatments

I Goldfarb, S Grossman, G Cohen-Taguri - Applied surface science, 2006 - Elsevier
Titanium silicide grows on silicon in a form of discontinuous layers, which is the most serious
obstacle to the formation of high-quality epilayers for VLSI applications. At the same time …

Titanium silicide islands on atomically clean Si (100): Identifying single electron tunneling effects

JL Tedesco, JE Rowe, RJ Nemanich - Journal of Applied Physics, 2010 - pubs.aip.org
Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films
of titanium (< 2 nm) on atomically clean Si (100) substrates followed by annealing to∼ 800 …

Self-organizational tendencies of heteroepitaxial transition-metal silicide nanoislands

I Goldfarb, E Roizin, S Manor, M Levinshtein - Materials science in …, 2009 - Elsevier
The aim of this work was to explore self-organizational tendencies of transition-metal silicide
nanoislands formed by heteroepitaxial self-assembled processes, such as CoxSiy/Si …

Nanometer scale connections to semiconductor surfaces

J Zikovsky - 2009 - era.library.ualberta.ca
Extending electronic devices beyond the limitations of current micro-electronics
manufacturing will require detailed knowledge of how to make contacts to semiconductor …