Geant4 simulation of energy deposition ratio and physical processes of CdZnTe crystals irradiated by high energy particles
M Cao, J Deng, W He, Y Zhou, R Xie, Y Jiang, L Wang - Applied Physics A, 2023 - Springer
CdZnTe (CZT) is an II–VI compound semiconductor with a zinc blende structure and has a
wide range of applications in nuclear radiation detectors. As the device size becomes …
wide range of applications in nuclear radiation detectors. As the device size becomes …
Molecular dynamics simulation of displacement damage in 6H-SiC
W Liao, C He, H He - Radiation Effects and Defects in Solids, 2019 - Taylor & Francis
As a new generation of low-loss components, 6H-SiC is widely used in optoelectronic
devices, electronic devices and other fields, especially in high temperature and strong …
devices, electronic devices and other fields, especially in high temperature and strong …
Atomistic simulation of displacement damage and effective nonionizing energy loss in InAs
A molecular dynamics (MD) method, along with the analytical bond-order potential, is
applied to study defect production in InAs. This potential is modified to obtain a better …
applied to study defect production in InAs. This potential is modified to obtain a better …
Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors
J Lei, N Wang, R Jiang, Q Hou - Micromachines, 2023 - mdpi.com
Radiation-hardened semiconductor GaN has drawn considerable attention owing to its
excellent properties such as large displacement energy. Many studies have focused on …
excellent properties such as large displacement energy. Many studies have focused on …