Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …

The design of the thermal management solution has a significant impact on the reliability
and power density of power electronics (PEs). As the electric vehicle (EV) industry moves …

Thermal management is a key design aspect of power converters since it determines their
reliability as well as their final performance and power density. Cooling technologies have …

Due to its superior electrical and thermal characteristics, silicon carbide power modules will
soon replace silicon modules to be mass-produced and implemented in all-electric and …

The peak power density of GaN high-electron-mobility transistor technology is limited by a
hierarchy of thermal resistances from the junction to the ambient. Here, we explore the …

This paper presents a comparison of conventional single-phase water/glycol liquid and
innovative two-phase cooling technology for thermal management of high-power electronics …

Gallium nitride (GaN) heteroepitaxially integrated with diamond (GaN-on-diamond) is
promising for high-power electronics due to the excellent heat spreading capability of …

The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …