Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration
We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-
dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin …
dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin …
Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy
We present a far-infrared transmission study on group-III nitride thin films. Cubic GaN and
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown …
AlN layers and c-oriented wurtzite GaN, AlN, and Al x Ga 1− x N (x< 0.3) layers were grown …
Infrared reflectance and transmission spectra in II-VI alloys and superlattices
Room temperature measurements of the far-infrared (FIR) reflectance spectra are reported
for the polar optical phonons in a series of bulk Cd x Zn 1− x Te (0≤ x≤ 1) and CdSe x Te …
for the polar optical phonons in a series of bulk Cd x Zn 1− x Te (0≤ x≤ 1) and CdSe x Te …
Optical characterizations of heavily doped p-type AlxGa1− xAs and GaAs epitaxial films at terahertz frequencies
ZG Hu, MBM Rinzan, SG Matsik, AGU Perera… - Journal of applied …, 2005 - pubs.aip.org
The optical properties of p-type Al x Ga 1− x As ( x= 0, 0.01, and 0.16) epitaxial films with
different beryllium and carbon doping concentrations (10 18–10 19 cm− 3) were …
different beryllium and carbon doping concentrations (10 18–10 19 cm− 3) were …
Assessing thermodynamical properties of Al1− xGaxSb alloys and optical modes for Al1− xGaxSb/GaAs epifilms and (AlSb) m/(GaSb) n superlattices
A generalized Green's function (GF) theory is adopted in the framework of a realistic rigid-ion-
model (RIM) to assess the composition, x-dependent lattice dynamics, and thermodynamical …
model (RIM) to assess the composition, x-dependent lattice dynamics, and thermodynamical …
Assessment of optical phonons in BeTe, BexZn1-xTe, p-BeTe epilayers and BeTe/ZnTe/GaAs (001) superlattices
DN Talwar, P Becla - Applied Physics A, 2022 - Springer
Comprehensive simulations for the polarization-dependent far-infrared (FIR) reflectance and
transmission spectra are reported to assess the longitudinal-optical (ωLO) and transverse …
transmission spectra are reported to assess the longitudinal-optical (ωLO) and transverse …
Direct evidence of LO phonon-plasmon coupled modes in n-GaN
DN Talwar - Applied Physics Letters, 2010 - pubs.aip.org
We report theoretical results of the far-infrared transmission in oblique incidence for
undoped and doped GaN epilayers. For c-GaN, our results in p-polarization find …
undoped and doped GaN epilayers. For c-GaN, our results in p-polarization find …
Optical Structural and Phonon Characteristics of Epitaxially Grown II–VI/III–V Films and Superlattices
DN Talwar - Advances in Fabrication and Investigation of …, 2024 - Springer
This chapter focuses on providing a systematic analysis of the far-infrared (FIR) reflectivity/
transmission, Raman scattering, spectroscopic ellipsometry (SE), and high-resolution …
transmission, Raman scattering, spectroscopic ellipsometry (SE), and high-resolution …
Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN
The lattice dynamical properties of dilute InAs1− xNx/InP (001) epilayers (0≤ x≤ 0.03)
grown by gas-source molecular beam epitaxy were carefully studied experimentally and …
grown by gas-source molecular beam epitaxy were carefully studied experimentally and …
Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (1 0 0) epilayers
We have reported room temperature infrared reflectance and transmission measurements at
near normal incidence in the frequency range of 200–6500 cm− 1 to characterize 3C-SiC …
near normal incidence in the frequency range of 200–6500 cm− 1 to characterize 3C-SiC …