Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Printed electronics including large‐area sensing, wearables, and bioelectronic systems are
often limited to simple circuits and hence it remains a major challenge to efficiently store …

As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of
connected devices, the need for processing large amounts of data in a fast and energy …

Non‐volatile memristors dynamically switch between high (HRS) and low resistance states
(LRS) in response to electrical stimuli, essential for electronic memories, neuromorphic …

Interface-driven multifunctional facets are gearing up in the field of science and technology.
Here, we present the interface-activated resistive switching (RS), negative differential …

Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices
were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted …

Solution-based memristors deposited by inkjet printing technique have a strong
technological potential based on their scalability, low cost, environmentally friendlier …

Solution-based memristors have gained significant attention in recent years due to their
potential for the low-cost, scalable, and environmentally friendly fabrication of resistive …

Abstract Two-dimensional (2D) materials have emerged as promising building blocks for
next generation memristive devices, owing to their unique electronic, mechanical, and …