Silicon surface modification and characterization for emergent photovoltaic applications based on energy transfer

W Peng, SM Rupich, N Shafiq, YN Gartstein… - Chemical …, 2015 - ACS Publications
2.1 Background There is already a wealth of information on the wet chemical cleaning of Si
for semiconductor processing,(14, 15) but there is less on subsequent modification methods …

Nanopillar photovoltaics: materials, processes, and devices

R Kapadia, Z Fan, K Takei, A Javey - Nano Energy, 2012 - Elsevier
Nanopillar photovoltaics present significant potential for fabrication of high-efficiency, low-
cost solar cells. The advantages over planar cells, including wider materials choice, device …

Low temperature surface passivation for silicon solar cells

C Leguijt, P Lölgen, JA Eikelboom, AW Weeber… - Solar Energy Materials …, 1996 - Elsevier
Surface passivation at low processing temperatures becomes an important topic for cheap
solar cell processing. In this study, we first give a broad overview of the state of the art in this …

Recombination at the interface between silicon and stoichiometric plasma silicon nitride

MJ Kerr, A Cuevas - Semiconductor science and technology, 2002 - iopscience.iop.org
The injection level dependence of the effective surface recombination velocity (S eff) for the
interface between crystalline silicon and stoichiometric silicon nitride, prepared by high …

Passivation of crystalline silicon using silicon nitride

A Cuevas, MJ Kerr, J Schmidt - 3rd World Conference …, 2003 - ieeexplore.ieee.org
The extraordinary capacity of plasma-enhanced chemical-vapour-deposited (PECVD)
silicon nitride (SiN) to passivate the surface of crystalline silicon wafers and, in the case of …

Low temperature silicon oxide and nitride for surface passivation of silicon solar cells

T Jana, S Mukhopadhyay, S Ray - Solar energy materials and solar cells, 2002 - Elsevier
Surface passivation at low processing temperature becomes an important topic for
crystalline and multicrystalline silicon solar cells. In this work, silicon oxide (250° C) and …

Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination

J Linnros - Journal of Applied Physics, 1998 - pubs.aip.org
A novel noncontact technique for semiconductor wafer mapping of the charge carrier lifetime
is reviewed. The principle is based upon measurements of free carrier absorption transients …

High-quality surface passivation of silicon using native oxide and silicon nitride layers

ZR Chowdhury, K Cho, NP Kherani - Applied Physics Letters, 2012 - pubs.aip.org
We report on the attainment of high quality surface passivation of crystalline silicon using
facile native oxide and plasma enhanced chemical vapour deposition SiN x. Using …

[PDF][PDF] Recent progress in the surface passivation of silicon solar cells using silicon nitride

J Schmidt, JD Moschner, J Henze, S Dauwe… - illumination, 2004 - researchgate.net
The current trend in photovoltaics towards thinner silicon wafers and higher efficiencies
makes an effective reduction of the surface recombination losses increasingly important …

Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide

M Kerr, J Schmidt, A Cuevas - Progress in Photovoltaics …, 2000 - Wiley Online Library
Plasma enhanced chemical vapor deposited silicon nitride films have been used to
passivate both the front and rear surface of simplified PERC silicon solar cells (planar …