Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

PA Alekseev, MS Dunaevskiy, DA Kirilenko… - Journal of Applied …, 2017 - pubs.aip.org
We study the structural and chemical transformations induced by focused laser beam in
GaAs nanowires with an axial zinc-blende/wurtzite (ZB/WZ) heterostructure. The …

GaAs Core/SrTiO3 Shell Nanowires Grown by Molecular Beam Epitaxy

X Guan, J Becdelievre, B Meunier, A Benali… - Nano …, 2016 - ACS Publications
We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by
vapor–liquid–solid assisted molecular beam epitaxy on Si (111) substrates. To control the …

X-ray photoelectron spectroscopy study of Ga nanodroplet on silica-terminated silicon surface for nanowire growth

L Fouquat, M Vettori, C Botella, A Benamrouche… - Journal of Crystal …, 2019 - Elsevier
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs
nanowires on Si substrates by Molecular Beam Epitaxy (MBE) are studied. The interaction of …

Insights into the arsenic shell decapping mechanisms in As/GaAs nanowires by x-ray and electron microscopy

L Fouquat, X Guan, C Botella, G Grenet… - The Journal of …, 2021 - ACS Publications
Nanowire heterostructures of the oxide (shell)–semiconducting (core) type are of interest for
various applications in energy harvesting, such as electrodes for photocatalysis and in …

Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls

AD Álvarez, N Peric, NAF Vergel, JP Nys… - …, 2019 - iopscience.iop.org
The surface morphology of III–V semiconductor nanowires (NWs) protected by an arsenic
cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning …

Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy

J Becdelievre, X Guan, I Dudko, P Regreny… - …, 2022 - iopscience.iop.org
Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor–liquid–
solid method. In this ultralong regime we show the existence of two features concerning the …

Spatially resolved analysis of dopant concentration in axial GaAs NW pn-contacts

A Nägelein, C Timm, K Schwarzburg, M Steidl… - Solar Energy Materials …, 2019 - Elsevier
The efficiency of novel opto-electronic devices eg solar cells crucially depends on
controlling the doping levels in the device. Decreasing the size of the structure by employing …

Etude par photoémission d'interfaces métal/oxyde et métal/semiconducteur élaborées par épitaxie par jets moléculaires

L Fouquat - 2018 - theses.hal.science
La recherche d'une miniaturisation toujours plus poussée des dispositifs en micro-et opto-
électronique a participé au développement des nanotechnologies. A l'échelle …

GaAs Heterostructured Nanowires Grown by Molecular Beam Epitaxy

J Penuelas, X Guan, J Becdelievre, T Dursap… - materials.cea.fr
Semiconductor nanowires (NWs) have been intensively studied over the past few years
because of their original physical properties. Unlike other systems, NWs offer the possibility …

GaAs/SrTiO3 Core–Shell Nanowires

X Guan, J Penuelas - Novel Compound Semiconductor …, 2017 - taylorfrancis.com
This chapter discusses the morphological, chemical and structural properties of such core–
shell nanowires (NW). Prior to the growth of the SrTiO3 shell, the GaAs NWs were protected …